A 10‐mW 3.9‐dB NF transformer‐based <i>V</i>‐band low‐noise amplifier in 65‐nm CMOS

Yu, Yiming; Wu, Yunqiu; Zhao, Chenxi; Liu, Huihua; Ban, Yong-Ling; Kang, Kai

doi:10.1002/jnm.2576

Cited by 5 publications

(2 citation statements)

References 10 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both applications require compact and lowpower front-ends, usually incorporating a low-noise amplifier (LNA) in the receiver. While transmission-line-based LNA designs are more commonly used in the V-band [6][7][8] due to faster design times, lumped matching can reduce the chip size significantly and transformers can additionally improve performance [9][10][11][12][13][14]. For these it is important to have accurate design equations to accelerate the design phase.…”

mentioning

confidence: 99%

Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers

Becker

Morath

Schumann

et al. 2022

Electronics Letters

View full text Add to dashboard Cite

This letter presents a low-noise amplifier with a 3 dB-bandwidth, from 55 to 74 GHz, excellent noise performance and low power consumption based on a three-stage common-source topology. For the first time to the authors' best knowledge, an analytical equation that also considers the gate-drain capacitance is derived for the employed shunt-series transformer feedback input matching network. To enable shunt-series transformer feedback matching without significant gain reduction a highly asymmetric transformer is designed. Furthermore, a compact transformer-implemented T-shaped output matching network is investigated to minimize the required area. To prove these concepts, the circuit has been fabricated in a 22 nm fully depleted silicon-on-insulator technology. Thanks to the transformer-based matching, an ultra-compact active footprint of 0.039 mm 2 is achieved. At a power consumption of 8.4 mW from a 0.41 V supply an average noise figure of 4.8 dB and a peak gain of 14.2 dB has been measured. In-and output matching better than −10 dB over the 19 GHz wide 3 dB-bandwidth are demonstrated.

show abstract

mentioning

confidence: 99%

Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers

Becker

Morath

Schumann

et al. 2022

Electronics Letters

View full text Add to dashboard Cite

show abstract

“…A different group by Zhang et al 24 reported a balun design algorithm based on compensation matching capacitors and their active S parameters. Using CMOS technology, Chen et al 25 designed a millimeter-wave upconversion mixer by using a two-path transconductance stage and Yu et al 26 reported a linear V-band low-noise amplifier by employing a Gm-boosting technique using full-wave high-frequency structure simulator. Other technologies like GaAs MMIC, hybrid integrated circuits, and electric vacuum devices are also presented by Li et al, 27 Yang et al, 28 and Wang et al, 29 respectively.…”

mentioning

confidence: 99%

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

2020

Int J Numerical Modelling

View full text Add to dashboard Cite

Wireless communication, precision guidance, imaging, internet of things, and biomedical applications in the millimeter-wave and THz bands promise new functionalities that cannot be provided by present systems. Different from present design methods, new design methods are required to support the development of high-performance millimeterwave and THz band devices and systems. These new design methods should incorporate new materials, advanced processing and technologies, and can accurately account for multi-physics coupling effects. This special issue collects 32 papers including 20 papers on active device modeling, nine papers on passive device and circuit modeling and design techniques, and three papers on emerging system applications.Active devices for state-of-the-art millimeter-wave and THz systems discussed in this special issue include Indium phosphide (InP) heterojunction bipolar transistors (HBTs), Indium Gallium Phosphide (InGaP)/Gallium arsenide (GaAs) HBTs, Gallium nitride (GaN) high electron mobility transistors (HEMTs), GaAs HEMTs, complementary metal oxide silicon (CMOS) transistors, and electric vacuum devices. The discussion covers the important device features of high frequency, high power, low noise, and high efficiency. As the frequency goes up to the millimeter-wave and THz bands, advanced physical-based or SPICE-like equivalent circuit and compact models are needed. As a solid-state device, InP transistor can operate at a very high frequency by taking advantages of extremely high electron mobility. Zhang et al 1 presented a review on the compact modeling of InP HBTs for THz integrated circuits. Useful improvements made for HBTs are reported on the analysis of intrinsic base resistances by Chen et al, 2 on large-signal models by Hu et al, 3 on the determination of cutoff and maximum oscillation frequencies by Zhang and Gao, 4 and on the thermal resistance calculation by Wang et al. 5 Due to a high breakthrough voltage and saturation velocity, GaN HEMTs is very promising for millimeter-wave solid-state power amplifiers. Chen et al 6 reported an improved quasi-physics zone division large-signal model to account for electro-thermal effects, which is valid for the ambient temperature range of 245 to 390 K. Physical parameters' effects, reliable parameter extraction, and dynamic thermal impedance extraction for the equivalent circuit models of GaN HEMTs are discussed by Mi et al, 7 Chen et al, 8 and Wang et al, 9 respectively. The modeling of emerging devices is also presented by Chen et al 10 for GaN-on-diamond HEMTs and Zhang et al 11 for AlGaN/GaN fin-shaped HEMTs, which may be interesting for next generation devices. Accurate modeling of transistors' noise performance is important for low-noise applications. Jarndal et al 12 developed a noise model for GaN HEMTs and Caddemi et al 13 reported an improved scalable parameter extraction method for GaAs HEMTs. CMOS transistor is very competitive in millimeter-wave and THz circuits due to its mature process. Bashir et al 14 presented a scalable small-...

show abstract

Low Power Low Noise CMOS RF Amplifiers for Wireless Applications: A Review

Hussein,

Motlak

2022

2022 2nd International Conference on Advances in Engineering Science and Technology (AEST)

View full text Add to dashboard Cite

A 10‐mW 3.9‐dB NF transformer‐based V‐band low‐noise amplifier in 65‐nm CMOS

Cited by 5 publications

References 10 publications

Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers

Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

Low Power Low Noise CMOS RF Amplifiers for Wireless Applications: A Review

Contact Info

Product

Resources

About