Analysis and Design of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Yu, Yiming; Fan, Yiming; Zhao, Chenxi; Liu, Huihua; Wu, Yunqiu; Ban, Yong‐Ling; Wang, Yin

doi:10.1109/access.2017.2692765

Cited by 35 publications

(31 citation statements)

References 18 publications

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“…The amplified noise signal and main signal are out of phase, such that the noise present in amplified main signal is canceled. Noise cancelation is appropriate for both single‐ended and differential‐ended configurations …”

Section: Noise Reduction Techniquesmentioning

confidence: 99%

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Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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Section: Noise Reduction Techniquesmentioning

confidence: 99%

“…NF of LNA is depended on the first stage of multistage LNA. Inductive source degeneration, CCC, current bleeding branch, positive feedback, and noise canceling techniques have been deputed for noise reduction. Current reuse technology, ultra‐low voltage design (ULV), forward body biasing (FBB) and CCC are chosen for power reduction.…”

Section: Introductionmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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“…Various algorithms like particle swarm optimization, noise cancellation technique, geometric programming (GP) method and NSGA-II algorithms are been reviewed.  Fabrication of inductorless LNA with Noise Cancellation technique is proposed [12]. In this proposal a cascode topology is used where Common source amplifier is followed by CG amplifier.…”

Section: B Based On Algorithmsmentioning

confidence: 99%

Single Stage 180nm CMOS Low Noise Amplifier Topologies and Optimization Algorithms for S Band Frequency

D*¹,

Kavya²

2019

IJRTE

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Low Noise Amplifier (LNA) plays an important role in radio receivers. It mainly determines the system noise and intermodulation behavior of overall receiver. LNA design is more challenging as it requires high gain, low noise figure, good input and output matching and unconditional stability. Further, designing a Low noise Amplifier requires active device selection, amplifier topology, optimization algorithms for superlative results. Hence this paper presents performance analysis of CMOS LNA based on different topologies and optimization algorithms for 180nm RF CMOS design in S band frequency. Here the best results, various limitations in each topology are reviewed and required specifications are determined in each designing. Further this best topology is used for designing LNA circuit which could be used in Indian Regional Navigation Satellite System (IRNSS) applications in dual band frequency.

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“…This pre-distortion technique contributes the main advantage of high gain with low power efficiency. Pre-distortion structure consists of auxillary resistor R A with parallel capacitor C P and with added resistors R 1 and R 2 and inductorless design [11] is used with the existing design of current reuse and source follower with feedback stage to overcome the problem of higher power consumption and to improve overall power efficiency with low noise and high gain at high frequency. The Small signal equivalent circuit of Proposed design is figured in Fig.3…”

Section: A Basic Objectivementioning

confidence: 99%

“…In proposed design, there is noise factor due to auxillary resistor with the added resistors at input of the design is expressed in (11), (12), (13). But this noise factor is totally compensated by adding the feedback capacitor in parallel with the auxillary resistor Ra and noise is cancelled with low noise and high gain.…”

Section: Noise Figurementioning

confidence: 99%

A 5- GHz CMOS Low Noise Amplifier with High Gain and Low Power using Pre-distortion Technique

Nathan¹

2018

IIRJET

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In this paper, a linearization technique called Predistortion is proposed with low noise amplifier and the design was implemented in 90-nm CMOS process .In this proposed design, pre-distortion circuit is employed in front of the low noise amplifier, which comprises of current reuse structure with source follower at the feedback reduces the power dissipation at the transmitter side of the amplifier. Predistorter linearizer improves the overall power efficiency of the LNA, with which high gain and low power is achieved. This proposed architecture supports the frequency of 5-GHz suitable for multiband standards with the wireless receivers applications. At 5-GHZ frequency it achieves high gain of 25 dB with low NF of 1.0 dB andPower gain (S 21) of 27.64 dB is obtained with good matching at input (S 11) <-10dB, which consumes low power of 5nW with efficient power at supply voltage of 3.3 V.

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Analysis and Design of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Cited by 35 publications

References 18 publications

Survey on parameter optimization of mobile communication band low noise amplifier design

Survey on parameter optimization of mobile communication band low noise amplifier design

Single Stage 180nm CMOS Low Noise Amplifier Topologies and Optimization Algorithms for S Band Frequency

A 5- GHz CMOS Low Noise Amplifier with High Gain and Low Power using Pre-distortion Technique

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