Analog/mixed-signal design challenges in 7-nm CMOS and beyond

Loke, Alvin L. S.; Yang, Dongyun; Wee, Tin Tin; Holland, Jonathan L.; Isakanian, Patrick; Rim, K.; Yang, Shu Ching; Schneider, Jacob S.; Nallapati, Giri; Dundigal, Sreeker; Lakdawala, Hasnain; Amelifard, B.; Lee, Chulkyu; McGovern, B.P.; Holdaway, Paul S.; Kong, Xiaohua; Leary, Burton M.

doi:10.1109/cicc.2018.8357060

Cited by 25 publications

(3 citation statements)

References 19 publications

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“…It is intelligent with the hardware system, and the IoT module is added to the original module. In this study, various process parameters and information required by FAB are continuously obtained in the 12″ stove [12,13]. Under this premise, in order to make the above software and hardware system intelligent, add the IoT module to the original module, so that we can continuously obtain various process parameters and information required by FAB in the 12″ furnace process tool.…”

Section: Mass Production Technologymentioning

confidence: 99%

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

Chang¹,

Chu²,

Wang³

et al. 2020

Linked Open Data - Applications, Trends and Future Developments

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Modern FAB uses a large number of high-energy processes, including plasma, CVD, and ion implantation. Furnaces are one of the important tools for semiconductor manufacturing. According to the requirements of conversion production management, FAB installed a set of IoT-based research based on 12″ 7 nm-level furnaces chip process. Two furnace processing tool measurement points were set up in a 12-inch 7 nm-level factory in Hsinchu Science Park, Taiwan, this is a 24-hour continuous monitoring system, the data obtained every second is sequentially send and stored in the cloud system. This study will be set in the cloud database for big data analysis and decision-making. The lower limit of TEOS, C2H4, CO is 0.4, 1.5, 1 ppm. Semiconductor process, so that IoT integration and big data operations can be performed in all processes, this is an important step to promote FAB intelligent production, and also an important contribution to this research.

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Section: Mass Production Technologymentioning

confidence: 99%

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

Chang¹,

Chu²,

Wang³

et al. 2020

Linked Open Data - Applications, Trends and Future Developments

View full text Add to dashboard Cite

show abstract

“…Furthermore, the applications like Long-term evolution (LTE) phones and emerging sub-6GHz 5G bands demand transistors with better analog/Radiofrequency (RF) performance [3]. Therefore, the development of analog/RF capabilities in advanced FinFET technology nodes is essential to reap the System-on-Chip (SoC) benefits like low power and high performance in smaller area [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis

Bhoir

Chiarella

Ragnarsson

et al. 2019

IEEE J. Electron Devices Soc.

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This paper discusses in detail the effects of Sub-10nm fin-width (W fin ) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the reduction in fin-width. Through different analog performance metrics, it is shown that analog circuit performance, in Sub-10nm W fin regime, cannot be improved just by W fin scaling but by optimizing source/drain resistance, gate dielectric thickness together with the W fin scaling. We also explored the effect of process induced total and random variability on trans-conductance and output conductance of FinFETs. A systematic strategy to decouple different variability sources has been discussed and it is shown that mobility, source/drain resistance and oxide thickness are the critical parameters to reduce variability.

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“…Further, various researches have revealed that a miniaturized device in nanoscale may encounter the stress-strain impact on its electrical performance. [41][42][43][44][45][46][47][48][49][50][51][52][53] In this regard, the basic structure of a VSTB FET also indubitably exerts heavy stress over the thin vertical body as it is surrounded by thick dielectric walls and other parts of the device. Therefore, the study of the stress-strain influence on the performance of a VSTB FET is an integral part of its reliability establishment.…”

mentioning

confidence: 99%

Silicon and Germanium Vertical Super-Thin Body (VSTB) FET: A Comparative Performance Overview Including Architectural Stress-Strain Impact

Barman

Baishya

2022

ECS J. Solid State Sci. Technol.

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This article aims to develop a comprehensive understanding of the comparative performance of a vertical super-thin body (VSTB) field-effect transistor in terms of two device material variations (silicon/Si and germanium/Ge) with the aid of 3-D Senaturus TCAD tool. More importantly, the influence of the inevitable architectural stress (exerted over the thin body by the thick dielectric walls) on the transfer characteristic of the device is also addressed for Si/Ge device. From the perspective of suitability in high-performance circuits, Ge outperforms Si by enhancing on-state current (Ion) by 30.28, 30.29, 29.91, and 26.98 µA at channel length of 10, 20, 30, and 40 nm, respectively, with an improvable deterioration in off-state leakage current, subthreshold swing, and drain-induced-barrier-lowering. Further, a three-dimensional stress analysis reveals that stress increases Ion more in Ge-device compared to its Si-counterpart. As expected, a similar nature is observed for the strain application. Finally, the radio-frequency study shows that although the relative performance of Ge with respect to Si in terms of input capacitance, gate-drain capacitance, and output conductance is inferior, the greater transconductance of Ge than Si lowers intrinsic delay and enhances the peaks of intrinsic gain, unit-gain cut-off frequency, and gain-bandwidth-product.

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Analog/mixed-signal design challenges in 7-nm CMOS and beyond

Cited by 25 publications

References 19 publications

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis

Silicon and Germanium Vertical Super-Thin Body (VSTB) FET: A Comparative Performance Overview Including Architectural Stress-Strain Impact

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