An Unique Methodology to Estimate The Thermal Time Constant and Dynamic Self Heating Impact for Accurate Reliability Evaluation in Advanced FinFET Technologies

Mukhopadhyay, Subhadeep; Kundu, Amit; Lee, Y.W.; Hsieh, Han-Chang; Huang, Danqiong; Horng, Jaw-Juinn; Chen, T.H.; Lee, J.H.; Tsai, Y. S.; Lin, C.K.; Lu, Ryan; He, Jun

doi:10.1109/iedm.2018.8614479

Cited by 3 publications

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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

et al. 2023

Chinese Phys. B

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In this paper, the dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs is comprehensively evaluated by ultrafast pulsed I–V measurement. For the first time, it’s found that the complete heating response and cooling response of SHE for SOI MOSFETs are conjugated two-stage curves. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than that in second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude respectively decrease by more than 25k and 4% with frequency increasing to 10M, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306k and current oscillation amplitude drops to 0.77%. Finally, the investigation of two-stage heating process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.

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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

et al. 2023

Chinese Phys. B

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HotGauge: A Methodology for Characterizing Advanced Hotspots in Modern and Next Generation Processors

Hankin

Werner

Amiraski

et al. 2021

2021 IEEE International Symposium on Workload Characterization (IISWC)

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Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs

Sun

et al. 2020

IEEE Trans. Device Mater. Relib.

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An Unique Methodology to Estimate The Thermal Time Constant and Dynamic Self Heating Impact for Accurate Reliability Evaluation in Advanced FinFET Technologies

Cited by 3 publications

References 0 publications

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

HotGauge: A Methodology for Characterizing Advanced Hotspots in Modern and Next Generation Processors

Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs

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