Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Abstract

In this paper, the dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs is comprehensively evaluated by ultrafast pulsed I–V measurement. For the first time, it’s found that the complete heating response and cooling response of SHE for SOI MOSFETs are conjugated two-stage curves. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than that in second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude respectively decrease by more than 25k and 4% with frequency increasing to 10M, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306k and current oscillation amplitude drops to 0.77%. Finally, the investigation of two-stage heating process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.