An uncooled 1280 x 1024 InGaAs focal plane array for small platform, shortwave infrared imaging

Battaglia, Jesse; Blessinger, Michael A.; Enriquez, Marlon; Ettenberg, M.; Evans, Michael J.; Flynn, Kevin C.; Lin, Mark Chii Jeng; Passe, J.; Stern, Mark J.; Sudol, Thomas M.

doi:10.1117/12.818761

Cited by 11 publications

(3 citation statements)

References 1 publication

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“…In the shortwave infrared band, many substances have unique spectral characteristics, which can provide low-cost, highly reliable and practical imaging technology support for spectral analysis and infrared imaging. Compared with other shortwave infrared detectors, the infrared indium gallium arsenide (InGaAs) detector has the advantages of high detectivity, high uniformity, high stability and good radiation resistance at near room temperature [ 1 ], so it is one of the best choices for miniaturized, low-cost and high-reliability shortwave infrared detection systems and has been widely used in the fields of space remote sensing, astronomical observation and spectral imaging [ 2 , 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

Zhang

et al. 2023

Sensors

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A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.

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Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

Zhang

et al. 2023

Sensors

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“…[1][2][3][4] . InGaAs detector with wide spectral, high integration, low power consμmption, low cost and large array becomes the focus of future development [5][6][7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates

Wang¹,

Ke²,

Yao³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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InGaAs-based p-i-n Photo-Detectors (PDs) on misoriented Si and conventional Si substrates are both designed, fabricated, and characterized. It is found that the as-grown PD structure on misoriented Si substrate has lower dislocation density than on conventional Si substrate. The PD fabricated on misoriented Si substrate shows a low dark-current of 83nA under −5 V, a zero bias voltage responsivity of 0.58 A/W at 1550 nm, the corresponding quantum efficiency is 46%. The dark-current and quantum efficiency at 1550 nm, of the PD on misoriented Si substrate, is about over one orders of magnitude lower and 70% higher respectively, than the comparison PD fabricated on conventional Si substrate.

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“…Recently, with the development of InGaAs sensors, the short-wave infrared (SWIR) band (from 0.9um to 1.7um) has been found to have wide applications in machine vision and military fields of use [1,2,3,4,5] . Light within this band cannot be seen by human eyes, but interacts with objects in a similar way as visible wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Solid Catadioptric telephoto lens design with SMS method

Wang

Benı́tez

Miñano³

et al. 2011

SPIE Proceedings

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ABSTRACT:Two new optical structures are designed using the Simultaneous Multiple Surfaces (SMS) method, comprised of 2 reflecting surfaces and 2 refracting surfaces, 800mm focal length, f/8 (aperture diameter 100 mm) and 1.18 0 diagonal field of view in the SWIR band. The lens surfaces are rotational symmetric and calculated to have good control of non-paraxial rays. We have achieved designs with excellent performance, and with total system length of less than 60 mm.

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An uncooled 1280 x 1024 InGaAs focal plane array for small platform, shortwave infrared imaging

Cited by 11 publications

References 1 publication

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates

Solid Catadioptric telephoto lens design with SMS method

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