Abstract:InGaAs-based p-i-n Photo-Detectors (PDs) on misoriented Si and conventional Si substrates are both designed, fabricated, and characterized. It is found that the as-grown PD structure on misoriented Si substrate has lower dislocation density than on conventional Si substrate. The PD fabricated on misoriented Si substrate shows a low dark-current of 83nA under −5 V, a zero bias voltage responsivity of 0.58 A/W at 1550 nm, the corresponding quantum efficiency is 46%. The dark-current and quantum efficiency at 155… Show more
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