2023
DOI: 10.3390/s23146556
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Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

Abstract: A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a … Show more

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Cited by 5 publications
(5 citation statements)
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“…The details are available in the Supporting Information. Our result (Figure c) exceeds the resolutions previously documented by Kim et al (2.58%) and Deumel et al (2.26%), and is even higher than those reported in the image sensor (1.1%). The introduction of the ACA refined interface fosters more consistent contact between the perovskite thick film and the TFT.…”
supporting
confidence: 47%
See 1 more Smart Citation
“…The details are available in the Supporting Information. Our result (Figure c) exceeds the resolutions previously documented by Kim et al (2.58%) and Deumel et al (2.26%), and is even higher than those reported in the image sensor (1.1%). The introduction of the ACA refined interface fosters more consistent contact between the perovskite thick film and the TFT.…”
supporting
confidence: 47%
“…Efforts are underway to integrate polycrystalline perovskite thick films with a thin-film transistor (TFT) array to facilitate large-area X-ray imaging. , A well-known bottleneck is the pronounced imperfections at the interfaces between the perovskite thick films and TFT array, which encompass fractures, pinholes, and delamination. , These flaws significantly hamper the imaging performance, particularly in terms of spatial resolution and uniformity. Notably, previous perovskite FPDs exhibited estimated dead pixel rates of 2.58% and 2.26% (Calculation process of dead pixel rate in the Supporting Information), a value much higher than those reported in the image sensor (1.1%). Furthermore, the fabrication yield remains disappointingly low, while the failure rate reaches as high as 83%.…”
mentioning
confidence: 89%
“…The type of detector that VINIS uses is typically referred to as an "extended response" sensor. This sensor has a special manufacturing process (InP substrate removal) that makes it differ from standard InGaAs devices, which are only sensitive to SWIR wavelengths (between λ ≈ 0.9 µm and λ ≈ 1.7 µm) [17][18][19][20][21].…”
Section: Device Under Testmentioning
confidence: 99%
“…[ 9 ] In order to broaden its response range to visible band, the InP substrate should be largely thinned to enable visible transparency, which further increases the fabrication complexity and cost. [ 10,11 ]…”
Section: Introductionmentioning
confidence: 99%
“…[9] In order to broaden its response range to visible band, the InP substrate should be largely thinned to enable visible transparency, which further increases the fabrication complexity and cost. [10,11] Solution-processed PbS colloidal quantum dots (CQDs) photodetectors have gained prominence as an alternative candidate for visible-to-SWIR photodetection due to continuously tunable bandgap and strong absorption coefficient of CQDs covering the entire SWIR range. [12][13][14] Solution processing enables the CQDs photodetectors monolithically integrable with silicon-based read circuit for broadband imaging at a very low cost.…”
Section: Introductionmentioning
confidence: 99%