An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback

Parvizi, Mahdi; Allidina, Karim; El-Gamal, M.N.

doi:10.1109/tmtt.2016.2562003

Cited by 101 publications

(49 citation statements)

References 26 publications

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“…Especially, it is used in inductor less CG LNA design, but the noise is increased due to the additional transistors. A capacitor has been placed between the drain terminals of complementary MOS devices to partially cancel the noise like that of a single CG device …”

Section: Noise Reduction Techniquesmentioning

confidence: 99%

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Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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Section: Noise Reduction Techniquesmentioning

confidence: 99%

“…Power consumption is minimized by supply voltage reduction also; but, enough drain current to provide reasonable gain has been refused to the millivolt circuit. This limitation is rectified by current reuse and passive g m boosting techniques…”

Section: Power Reduction Techniquesmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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“…In Fig 1(b), the source follower stage with active feedback is shown.This structure allows higher transconductance with higher efficiency of power. This active feedback supports wideband performance with input matching [3].With the advantage of less complexity,the active feedback function as amplifier of transimpedance so that design of inductorless low noise amplifier is created. The main objective of this feedback principle is to achieve high gain with efficient power consumption.…”

Section: Introductionmentioning

confidence: 97%

A 5- GHz CMOS Low Noise Amplifier with High Gain and Low Power using Pre-distortion Technique

Nathan¹

2018

IIRJET

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In this paper, a linearization technique called Predistortion is proposed with low noise amplifier and the design was implemented in 90-nm CMOS process .In this proposed design, pre-distortion circuit is employed in front of the low noise amplifier, which comprises of current reuse structure with source follower at the feedback reduces the power dissipation at the transmitter side of the amplifier. Predistorter linearizer improves the overall power efficiency of the LNA, with which high gain and low power is achieved. This proposed architecture supports the frequency of 5-GHz suitable for multiband standards with the wireless receivers applications. At 5-GHZ frequency it achieves high gain of 25 dB with low NF of 1.0 dB andPower gain (S 21) of 27.64 dB is obtained with good matching at input (S 11) <-10dB, which consumes low power of 5nW with efficient power at supply voltage of 3.3 V.

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“…Recently, current-reuse has been reported to be very useful design technique for low power LNAs and it was widely used to reduce the overall power consumption and improve the current efficiency. Using this methods, the dc current is shared among transistors, while each contributes to the overall gain of the LNA [3,4,5]. Moreover, Some CMOS-based UWB LNA, which utilize the current-reused technique, were reported [6,7,8,9].…”

Section: Introductionmentioning

confidence: 99%

Design of ultra-wideband LNA with 3.6 ± 0.4 dB NF and 15.9 ± 1.1 dB gain

Pan

Zhang

Huang

et al. 2018

IEICE Electron. Express

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This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) with low and flat noise figure (NF) as well as high and flat gain using 0.18 µm CMOS technology. Frequency range for both NF and gain is expanded by using current-reuse and weak shunt resistor feedback. The LNA consumes 8.4 mW under 1.8 V. High performances are achieved with the gain of 15.9±1.1 dB, NF of 3.6±0.4 dB within 2.9-10.8 GHz band. The input 1 dB compression point (P 1dB ) is -17.1 dBm at 7 GHz. The area of the LNA is 0.63 mm 2 , with pads included.

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An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback

Cited by 101 publications

References 26 publications

Survey on parameter optimization of mobile communication band low noise amplifier design

Survey on parameter optimization of mobile communication band low noise amplifier design

A 5- GHz CMOS Low Noise Amplifier with High Gain and Low Power using Pre-distortion Technique

Design of ultra-wideband LNA with 3.6 ± 0.4 dB NF and 15.9 ± 1.1 dB gain

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