An RF BiCMOS process using high f/sub SR/ spiral inductor with premetal deep trenches and a dual recessed bipolar collector sink

Yoshida, Hiroshi; Suzuki, H.; Kinoshita, Y.; Fujii, Hiroki; Yamazaki, T.

doi:10.1109/iedm.1998.746328

Cited by 4 publications

(1 citation statement)

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“…The residual stress and built-in stress gradient of a thick deposited film may cause the film to crack as well. Other techniques have been developed to form 'localized' insulating layers in the substrate underneath specific devices, such as etching holes into the silicon substrate under particular devices and filling them with borophosphosilicate glass Polysilicon Single-crystal silicon (BPSG) [8]. The improvements in the device performance, however, are typically limited.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate

Jiang

Yoo

Yeh

et al. 2001

J. Micromech. Microeng.

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A silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-µm-deep silicon dioxide blocks.

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Section: Introductionmentioning

confidence: 99%