The density of dislocations generated at
Si3N4
film edges on silicon substrate by selective oxidation is measured and the relation between the selective oxidation conditions and dislocation generation at the film edges is investigated. Dislocations are observed using Secco etching. The results show that the density of dislocations does not continuously increase with oxidation temperature, but decreases markedly at temperatures above 1000°C. A further experiment with recessed oxide structure reveals that the generation of dislocations depends strongly on the cross‐sectional structure of the sample These results are interpreted in terms of viscous flow of
SiO2
film. Another experiment suggests that high pressure oxidation is not effective for suppressing dislocation generation, although it is useful for reducing oxidation time. Finally, collector‐emitter shorts of transistors in bipolar integrated circuits are examined quantitatively using a simple statistical method in relation to the dislocations generated at
Si3N4
film edges.
A new method of performing a creep test on silicon single crystals is described. The experiment utilizes silicon wafers. The stress applied to the wafers is provided by a Si3N4 film deposited by chemical vapor deposition on the front side of the wafer. The samples, i.e., silicon wafers with superposed Si3N4 films, are annealed in a quartz tube at 1000–1100 °C. The creep curves obtained are classified into two types according to stress. One type is related to plastic deformation of the wafer; the other is an elastic deformation. These results are available for the use of Si3N4 film in semiconductor technology.
Kα and Kβ x‐ray fluorescence spectra of various V, Cr and Mn compounds were measured with a Bragg spectrometer. The relative intensities of the Kβ1,3, Kβ2, Kβ′ and Kβ″ lines with respect to the Kα line were determined to confirm the chemical effect on the Kβ/Kα intensity ratio obtained using a Si(Li) detector. Chemical effects on each component line are discussed with respect to the oxidation state of the metal ions. The relative importance of an increase in transition probabilities of the Kβ2 group (Kβ2 and Kβ″) was evaluated in the determination of the overall Kβ/Kα ratio.
Kα/Kβ intensity ratios of 54Cr formd by the decay of various 54Mn-labeled manganese compounds are compared with those of vanadium, chromium and manganese compounds excited with X-rays. In all cases the Kα/Kβ intensity ratios are found to depend on the chemical state of an X-ray emitting atom, decreaeasing in general with an increase in the oxidation number of the central metal ion.
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