An organic multilevel non-volatile memory device based on multiple independent switching modes

A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

“…S1b † is then strongly enhanced and the contact becomes ohmic, resulting in the increase of the device conductance. [30][31][32] The same mechanism happens in the CuPc/ PFO interface when applied the opposite direction voltage, the result of which is shown in Fig. 1d.…”

“…The lm of CuPc can effectively prevent the previously reported formation of the metallic conducting channels, making the device more stable. 31 The device exhibits a distinctive history-dependent resistive switching behavior at room temperature, as plotted in the current-voltage (I-V) characteristics of Fig. 1c with the Au electrode grounded and the ITO electrode applied with a scanning voltage and of Fig.…”

“…Essentially, the conductance change is attributed to the modulation of the injection barrier polarized by P(VDF-TrFE) component under applied pulse. [30][31][32] When the device was applied pulses continuously, the polarization of P(VDF-TrFE) component can be enhanced easily at rst, and then become slowly, which lead to the trend of conductance change.…”

The Impact of Contact Position on the Retention Performance in Thin‐Film Ferroelectric Transistors

“…[15,16] This phenomenon will be amplified while semiconductor acts as compensating material, [45] then makes the depolarization field become one of the main factors to determine the retention performance of FeTFTs. [17] As the FeTFTs are utilized in multistate memory devices, [3][4][5][6][46][47][48] we now look at the depolarization field in various standby states. To achieve the standby condition, all contact of FeTFT should be short-circuited or applied with 0 V. For the simulation of the depolarization field, the sweeping of V g was stop at different intermediate states in the forward scan or in the backward scan.…”

“…Ferroelectric memory, typically realized using the ferroelectric thin-film transistor (FeTFT), has progressed toward high endurance, [1,2] multilevel storage, [3][4][5] and flexible device fabrication. [6,7] The application of 2D materials, such as black phosphorus, MoS 2 , and graphene, provides more choice for tunable direct bandgap and high carrier mobility semiconductors.…”