Ferroelectric polymers for non‐volatile memory devices: a review

Abstract

Ferroelectric memories have attracted great attention for data storage, and ferroelectric polymers have been widely studied with the development of flexible and wearable devices. The multifunctional capabilities, non‐volatile memory state, low power consumption, long durability, fast switching, chemical stability and mechanical flexibility make them good candidates for various memories, such as ferroelectric tunnel junctions and diodes, ferroelectric capacitors, resistive memories and field‐effect transistors. Here, recent advances in the research of these ferroelectric polymer memories are summarized, and challenges in the development of smart electronics are also discussed. © 2020 Society of Chemical Industry

A Water‐Gated Organic Thin‐Film Transistor for Glyphosate Detection: A Comparative Study with Fluorescence Sensing

“…Toward this end, the external physical stimuli might be useful for the amplification of chemical sensing signals of polymers. One of the typical examples in the utilization of physical stimuli for the modulation of high‐order functions is that poly(vinylidene fluoride‐trifluoroethylene) (PVDF‐TrFE) thin‐films can behave as flash memory and piezoelectric devices owing to their responsiveness of the dipole in each monomer unit to the external electric‐field [7] . We recently demonstrated the field‐effect assisted modulation (FEM) mechanism for the enhancement of sensing signals in the water‐gated thin‐film transistor (WG‐OTFT) based on polythiophene [8] .…”

“…One of the typical examples in the utilization of physical stimuli forthe modulation of high-order functions is that poly(vinylidenef luoride-trifluoroethylene)( PVDF-TrFE) thin-films can behavea sf lash memory andp iezoelectric deviceso wing to their responsivenesso ft he dipole in each monomer unit to the externale lectric-field. [7] We recently demonstrated the field-effect assisted modulation (FEM) mechanism for the enhancement of sensing signals in the water-gated thin-film tran-sistor (WG-OTFT) based on polythiophene. [8] Molecular recognition phenomena and electrical double layer (EDL) [9] (at the polymer/water interface) originated from the field-effect work cooperatively to generate the sensings ignals.…”

Interface Modification in Three‐Terminal Organic Memory and Synaptic Device

“…Traditional memory devices based on inorganic silicon [1][2][3] are incompatible with the state-of-the-art flexible electronics owing to its rigid property. [4][5][6] Recently, in order to enrich the variety of devices, some new materials including nanoparticles, [7] polymer, [8] ferroelectric, [9] organic small molecules, [10] 2D materials, [11] and hybrid composites [12] were developed and applied in three-terminal organic memory devices, contributing to the development of three new kinds of OFET memory devices, electrodes/semiconductor layer; therefore, the interface plays an important role in these devices. [30] In this review, we focus on the interface engineering in three-terminal organic memory devices (Figure 1).…”

Low‐frequency ferroelectric switching studies in PVDF thin films across Cu or (Ag/Cu)/PVDF/Cu capacitor structures

“…Domain dynamics in organic ferroelectric thin films attracted a lot of attention due to their applicability in nonvolatile ferroelectric and resistive random access memory devices. [1][2][3][4][5][6][7][8][9][10][11][12] Organic ferroelectric memory devices signify their compatibleness with flexible substrates and also for their suitability in low operation performance devices. 8 The remnant polarization and its response to the applied signal amplitude and frequency are crucial to assess the writing speed and reading time of these memory devices.…”