2021
DOI: 10.1002/pssa.202100408
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The Impact of Contact Position on the Retention Performance in Thin‐Film Ferroelectric Transistors

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202100408.

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Cited by 1 publication
(1 citation statement)
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“…This software framework has been utilized to investigate device behavior in ferroelectric transistors (Chen et al, 2021). The open source nature of DEVSIM has made it possible for researchers to incorporate its functionality into their own solution frameworks (Hulbert, 2019a(Hulbert, , 2019b.…”
Section: Statement Of Needmentioning
confidence: 99%
“…This software framework has been utilized to investigate device behavior in ferroelectric transistors (Chen et al, 2021). The open source nature of DEVSIM has made it possible for researchers to incorporate its functionality into their own solution frameworks (Hulbert, 2019a(Hulbert, , 2019b.…”
Section: Statement Of Needmentioning
confidence: 99%