An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition

Lee, Seung Hwan; Jeong, Hyun‐Jun; Han, Ki Lim; Baek, GeonHo; Park, Jin‐Seong

doi:10.1039/d0tc05281g

Cited by 15 publications

(12 citation statements)

References 54 publications

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“…Flexible substrates, such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polytetrafluoroethylene (PTFE), and polydimethylsiloxane (PDMS) are used instead of the conventional rigid substrates to realize flexible electronics. However, since flexible substrates generally have lower thermal resistance than that of rigid substrates (i.e., silicon and glass), it is relatively difficult to implement stable transistor operation [46][47][48][49]. Metal-oxide semiconductors that can be processed at low temperatures (<350 • C) and offer stable electrical performance are promising active materials for flexible transistors.…”

Section: Flexible Devicementioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.

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Section: Flexible Devicementioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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“…In the few additional studies involving the 4d or 5d transition metals, Nb‐based films have been deposited from Nb(OEt) 5 in combination with HQ, [ 421 ] Mo‐based films from molybdenum hexacarbonyl together with 1,2‐ethanedithiol (EDT), [ 242,243 ] 1,4‐butanedithiol, and BDT, [ 243 ] and In‐based films from bis(trimethylsilyl)amidodiethylindium (INCA‐1) and HQ. [ 369,422,423 ] The as‐deposited In–HQ films showed a structural change upon exposure to ambient air and were found promising as flexible transparent films. [ 424 ] Tin‐based hybrid films have been deposited from Sn–TDMA together with GL, [ 220,425 ] and EG, [ 220 ] and also from HS–Sn with HQ.…”

Section: Brief Account Of Ald/mld Processes Developedmentioning

confidence: 99%

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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“…One is to exploit the full potential of TFTs with ALD‐derived n ‐channel oxide channels to verify the feasibility of using them as non‐planar structures such as vertical TFT (VTFT) 72–75 in AR/VR displays or three‐dimensional NAND flash memory. The other combines LTPS‐compatible high‐performance TFTs with an ALD‐derived n ‐type semiconducting channel layer through novel structures including heterostructures, 22–25 bilayers, 26 and hybrid channels 27,28 …”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…In this review, recent research on ALD‐derived semiconducting oxides and insulating dielectric films and their suitability for high‐performance oxide TFTs is described. The basic principles of ALD and earlier approaches to flexible oxide TFTs were reviewed in 2018 by Sheng et al 20,21 We therefore focused on studies of ALD‐based oxide TFTs reported since 2018, highlighting the use of novel structures including heterostructures, 22–25 bilayers, 26 and hybrid channels 27,28 in the development of LTPS‐compatible high‐performance oxide TFTs. Efforts to create 3D applications of ALD‐derived oxide TFTs, including vertical TFTs and complementary metal–oxide semiconductor (CMOS) TFTs for AR/VR, monolithic 3D devices, and 3D memory are also covered.…”

Section: Introductionmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition

Abstract: Indium oxide and indicone hybrid films consisting of indium oxide and organic aromatic linker are grown by molecular layer deposition (MLD) using bis(trimethylsilyl)amido-diethyl Indium (INCA-1) as the indium precursor, hydrogen...

Cited by 15 publications

References 54 publications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

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