An Online Frequency-Domain Junction Temperature Estimation Method for IGBT Modules

Wang, Ze; Wang, Qiao

doi:10.1109/tpel.2015.2397955

Cited by 42 publications

(13 citation statements)

References 9 publications

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“…Finally, the combination of the derivative effect of the stray inductance LkE and the integrator gives an accurate estimation of the collector current variation ∆ic in the considered interval. (11) and (12) Diode recovery storage fall charge QrrD [35] and maximum reverse recovery current Irrm…”

Section: Charge-based D-tsepsmentioning

confidence: 99%

“…Nevertheless, the distances of the formers from the latter ones together with the considerable response delays typically lead to a great estimation error. In order to get a faster estimation of Tj, many efforts have been done very recently on model-based methods [11][12][13][14]. In such methods, Tj estimation can be achieved as the response of an equivalent thermal RC network to power losses.…”

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confidence: 99%

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Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Luo

Iannuzzo

et al. 2018

IEEE Trans. Ind. Electron.

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This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor (IGBT) modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis. Index Terms-High-power IGBT modules, auxiliary parasitic inductance, dynamic thermo-sensitive electrical parameters, junction temperature extraction principles. I. INTRODUCTION HE fast-growing pace of high-power conversion systems keep developing high-power Insulated Gate Bipolar Transistors (IGBTs) [1,2]. Thermal performance is currently regarded as one of the most important specifications in high-power modules, since both the short-term characteristics [3] and long-term ones are temperature-dependent [4,5]. In terms of the maximum operating junction temperature Tj, the commercially-available silicon-based power devices are rated up to 175 °C and the expected operation Tj in Wide-Band-Gap devices can reach 300 °C [6]. Hence, the knowledge of Tj has a crucial effect on the safe operation area of IGBTs. So far, many practical methods have been proposed [7-10]. Generally, the widely-studied Tj estimation methods in

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Section: Charge-based D-tsepsmentioning

confidence: 99%

mentioning

confidence: 99%

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Luo

Iannuzzo

et al. 2018

IEEE Trans. Ind. Electron.

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“…In this path the extracted low pass filter from the Foster thermal network is used to model the loss behaviours flowing out of the device, and the filtered loss can create correct temperature behaviour of thermal grease T CH and heat sink T HA outside the devices. The two benchmark indicators Z PinTJC and G PinPout for the new thermal model can be solved in (18) and (19), and then the gain from P in to junction temperature can be calculated in (20) (20) The Bode plot of Z PinTj and the time-domain simulation on the same conditions of Fig. 8 are implemented on the new thermal model, as shown in Fig.…”

Section: B a New Thermal Model In The Frequency Domainmentioning

confidence: 99%

Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices

Liserre

et al. 2016

IEEE Trans. Power Electron.

162

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The thermal behavior of power electronics devices has being a crucial design consideration because it is closely related to the reliability and also the cost of the converter system. Unfortunately, the widely used thermal models based on lumps of thermal resistances and capacitances have their limits to correctly predict the device temperatures, especially when considering the thermal grease and heat sink attached to the power semiconductor devices. In this paper, frequency-domain approach is applied to the modelling of the thermal dynamics for power devices. The limits of the existing RC lumpbased thermal networks are explained from a point of view of frequency domain. Based on the discovery, a more advanced thermal model developed in the frequency domain is proposed, which can be easily established by characterizing the slope variation from the bode diagram of the typically used Foster thermal network. The proposed model can be used to predict not only the internal temperature behaviours of the devices but also the behaviours of heat flowing out of the devices. As a result, more correct estimation of device temperature can be achieved when considering the cooling conditions for the devices.

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“…As the module undergoes increasing numbers of power cycles, aging of internal components is inevitable. Aging effects can be divided into bond wire degradation [28,29] and solder fatigue [30,31]. The main effects of bond wire degradation are bond line liftoff and cracking [32].…”

Section: Introductionmentioning

confidence: 99%

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Kong

Ouyang

et al. 2019

Energies

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The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

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An Online Frequency-Domain Junction Temperature Estimation Method for IGBT Modules

Cited by 42 publications

References 9 publications

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

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