An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement

Kousai, Shouhei; Hajimiri, Ali

doi:10.1109/jssc.2009.2032271

Cited by 65 publications

(26 citation statements)

References 20 publications

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“…The PAs present stateof-the-art P out [9] and bandwidth [10], comparable with [8], but larger than other PAs with state-of-the-art bandwidths (1.3 GHz) [25]. Modulation/spectral requirements were met for uplink WCDMA/LTE [9], [10].…”

Section: Measurement Resultsmentioning

confidence: 99%

Analysis of a 5.5-V Class-D Stage Used in $+$30-dBm Outphasing RF PAs in 130- and 65-nm CMOS

Fritzin

Svensson

Alvandpour

2012

IEEE Trans. Circuits Syst. II

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Abstract-This paper presents the design and analysis of a 5.5 V Class-D stage used in two fully integrated watt-level, +32.0 dBm and +29.7 dBm, outphasing RF Power Amplifiers (PA) in standard 130 nm and 65 nm CMOS technologies. The Class-D stage utilizes a cascode configuration, driven by an AC-coupled low-voltage driver, to allow a 5.5 V supply in the 1.2/2.5 V technologies without excessive device voltage stress. RMS electric fields (E) across the gate oxides and the optimal bias point, where the voltage stress is equally divided between the transistors, are computed. At the optimal bias point, the RMS E, the power dissipation of the parasitic drain capacitance of the common-source transistors, and the equivalent on-resistances are reduced by approximately 25 %, 50 %, and 25 %, compared to a conventional cascode (inverter) stage. To the authors' best knowledge, the Class-D PAs presented are among the first fully integrated CMOS outphasing PAs reaching +30 dBm and demonstrate state-of-the-art output power and bandwidth.

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Section: Measurement Resultsmentioning

confidence: 99%

Analysis of a 5.5-V Class-D Stage Used in $+$30-dBm Outphasing RF PAs in 130- and 65-nm CMOS

Fritzin

Svensson

Alvandpour

2012

IEEE Trans. Circuits Syst. II

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“…Total occupied area for PAs has been reduced by sharing a PA with different frequency bands and standards. An octave range and multi-mode power amplifier is developed by employing transformer at the output [35]. In addition to the area reduction, many efficiency improvement techniques have been proposed.…”

Section: High Power Amplifier (Pa)mentioning

confidence: 99%

Recent progress in CMOS RF circuit design

Kousai

2014

IEICE Electron. Express

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This paper reviews recent progress in CMOS RF circuits with respect to technology scaling. It tunes out that RF transceivers almost ideally scale with technologies, even though some of RF circuits do not obey scaling law due to the noise, linearity, matching, and output power constraints. In order to overcome these constraints many design techniques including all digital approach, digital assisted approach, noise cancelling, non-linearity canceling, and RF filtering have been introduced. Also remaining challenges for the future is discussed.

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“…However, generally this slightly impairs the efficiency, counteracting the intended advantage of a higher supply voltage. Apart from voltage stacking, current combining has been implemented (Kavousian et al, 2008;Kousai & Hajimiri, 2009), as well as the switching in of several parallel stages (Walling et al, 2008). The latter two will be covered more in the section on transmitter architectures.…”

Section: Cmos Pa Implementationsmentioning

confidence: 99%

“…A 62 dB power control range was achieved, as well as a 27.8dBm maximum output power and an average WCDMA efficiency of 26.5%. Current summing was also used by Kousai and Hajimiri (2009), utilizing 16 parallel power mixers and a transformer at the output. The phase information modulates the highfrequency digital LO signal.…”

Section: Digitally Controlled Txmentioning

confidence: 99%

CMOS Integrated Switched-Mode Transmitters for Wireless Communication

Cijvat¹

2010

Advances in Solid State Circuit Technologies

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An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement

Cited by 65 publications

References 20 publications

Analysis of a 5.5-V Class-D Stage Used in $+$30-dBm Outphasing RF PAs in 130- and 65-nm CMOS

Analysis of a 5.5-V Class-D Stage Used in $+$30-dBm Outphasing RF PAs in 130- and 65-nm CMOS

Recent progress in CMOS RF circuit design

CMOS Integrated Switched-Mode Transmitters for Wireless Communication

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