An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors

Grinberg, A. A.; Shur, M. S.; Fischer, R.; Morkoç̌, H.

doi:10.1109/t-ed.1984.21784

Cited by 165 publications

(62 citation statements)

References 12 publications

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“…The situation is not unlike that in extremely short-basewidth HBTs, in which the reduced opportunities for scattering lead to electron distribution functions that are highly distorted from their equilibrium forms [4]. Nevertheless, it has been common practice in modeling HBTs to employ quasi-equilibrium statistics via a splitting of the minority-carrier quasi-Fermi level (QFL) at the hetero-interface between the emitter and the highly doped base [5,6,7]. It is possible with this approach to get good agreement in the DC characteristics with results from a complete solution to the Boltzmann Transport Equation [8].…”

Section: Introductionmentioning

confidence: 99%

Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

Clifford

John

Pulfrey

2003

IEEE Trans. Nanotechnology

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The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube FETs are computed via a self-consistent solution to the 2-D potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain contacts to the tube, respectively. The interesting phenomena of bipolar conduction in a FET, and of drain-induced barrier thinning (DIBT) are observed. These phenomena are shown to add a breakdown-like feature to the drain I-V characteristic. It is also shown that a more traditional, saturating-type characteristic can be obtained by workfunction engineering of the source and drain contacts.

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Section: Introductionmentioning

confidence: 99%

Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

Clifford

John

Pulfrey

2003

IEEE Trans. Nanotechnology

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“…7). Graded composition near the heterointerface can also diminish interface notch and greatly enhance the emitter injection efficiency [20,21]. Table 1 shows the structure parameters of the HPT which has been optimized.…”

Section: Resultsmentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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Fabrication, physical simulation, and optimization of two-terminal Pnp heterojunction phototransistors (2T-HPTs) based on In 0.53 Ga 0.47 As/InP are reported. The parameters of fundamental models are determined by comparing the simulated current and response characteristics with the experimental results. To optimize the optical gain and device performance, the precise adjustment of the base doping level, base width, and compositional grading of base has been investigated. Properly reducing the base width or increasing the range of the compositional grading can greatly enhance the emitter injection efficiency. The effects of high-low doping in collector region and the insertion of a thin, undoped InGaAs layer in the base region of the HPT have also been investigated in detail. It is found the high-low doping in collector can form an electric field to aid carrier transport, and the intrinsic layer between emitter and base has functions of reducing knee voltage and the dark current of HPT.

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“…For heterojunction bipolar transistors (HBTs) with inherent high current gain, high cutoff frequency, and high speed operation, interface states at the emitter-base (E-B) heterojunctions are very important for key figures of merits on 1/f noise, ideality factor, the current gain, and the base leakage current through the degradation of heterojunction [1][2][3][4]. They strongly depend on the quality of the emitterbase heterojunction interface and, therefore, the characterization of traps over the energy bandgap at the E-B heterointerface is one of the most important topics for assessing both the reliability and the robustness of HBTs and their integrated circuits.…”

Section: Introductionmentioning

confidence: 99%