An investigation of pnp polysilicon emitter transistors

A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula>

“…Consistently, one would expect a decreased current gain in p-n-p BJTs featuring a p + -doped poly-Si emitter/n-doped c-Si base junction. The opposite is observed in [19]- [21]. Also in p-n-p BJTs, the current gain is increased for devices with poly-Si emitters as compared with pure c-Si devices.…”