An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

Thomas, Ajith; Vinayakan, R.; Ison, V. V.

doi:10.1039/d0ra02740e

Cited by 15 publications

(13 citation statements)

References 36 publications

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“…147 The usage of the ZnO nanocrystals was also demonstrated as an electron transport layer in a P3HT:PbS BHJ hybrid solar cell, with the CdSe quantum dot acting as a buffer layer. 152 Here, the ZnO nanocrystals act as the electron transporting medium between the active layer and the ITO cathode, with the CdSe quantum dot layer bridging the energy difference between ZnO and the active layer due to its energy level lying in-between ZnO and P3HT:PbS. ZnO nanocrystals were synthesized separately and annealed at 230 C for 20 minutes to promote crystallization.…”

Section: Introductionmentioning

confidence: 99%

ZnO nanostructured materials for emerging solar cell applications

et al. 2020

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Section: Introductionmentioning

confidence: 99%

ZnO nanostructured materials for emerging solar cell applications

et al. 2020

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“…Unlike Figure 3 b, PbS QD was blended with P3HT, so the bandgap of P3HT overlapped with PbS QD. By overlapping the bandgap, holes generated by light in the PbS QD can be quickly extracted to the ITO electrode through the P3HT [ 24 , 28 ].…”

Section: Methodsmentioning

confidence: 99%

Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT

et al. 2021

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In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS QD used for SWIR photoactive layer showed an absorption peak at 1410 nm. In addition, by using zinc oxide nanoparticles (ZnO NPs) as an interlayer, we obtained the stable current characteristics of our device. To confirm the effectiveness of P3HT on the PbS QD-based SWIR photodetector, we compared the electrical characteristics of a PbS QD-based device with a hybrid P3HT:PbS QD-based device. In the reverse bias region, the current on/off ratio of the PbS QD-based device was 1.3, whereas the on/off ratio of the hybrid P3HT:PbS QD-based device was 2.9; 2.2 times higher than the PbS QD-based device. At −1 V, the on/off ratio of the PbS QD-based device was 1.3 and the on/off ratio of the hybrid P3HT:PbS QD-based device was 3.4; 2.6 times higher than the PbS QD-based device. The fabricated P3HT:PbS QD-based device had the highest on/off ratio when −1 V voltage was applied.

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“…Thomas (2020) fabricated an inverted bulk-heterojunction PV cell based on PbS nanocrystals and P3HT blends, with a ZnO nanocrystals layer (ETL) and an additional buffer layer containing CdSe QDs between the ZnO layer and the active layer [ 219 ]. In the absence of the CdSe layer, the cell efficiency is 1.7% while the insertion of this layer increased the cell efficiency to 2.4%.…”

Section: Hybrid Nanocomposite Films Deposited By Spin-coating For Pv Cellsmentioning

confidence: 99%

Hybrid Nanocomposite Thin Films for Photovoltaic Applications: A Review

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2021

Nanomaterials

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Continuing growth in global energy consumption and the growing concerns regarding climate change and environmental pollution are the strongest drivers of renewable energy deployment. Solar energy is the most abundant and cleanest renewable energy source available. Nowadays, photovoltaic technologies can be regarded as viable pathways to provide sustainable energy generation, the achievement attained in designing nanomaterials with tunable properties and the progress made in the production processes having a major impact in their development. Solar cells involving hybrid nanocomposite layers have, lately, received extensive research attention due to the possibility to combine the advantages derived from the properties of both components: flexibility and processability from the organic part and stability and optoelectronics features from the inorganic part. Thus, this review provides a synopsis on hybrid solar cells developed in the last decade which involve composite layers deposited by spin-coating, the most used deposition method, and matrix-assisted pulsed laser evaporation, a relatively new deposition technique. The overview is focused on the hybrid nanocomposite films that can use conducting polymers and metal phthalocyanines as p-type materials, fullerene derivatives and non-fullerene compounds as n-type materials, and semiconductor nanostructures based on metal oxide, chalcogenides, and silicon. A survey regarding the influence of various factors on the hybrid solar cell efficiency is given in order to identify new strategies for enhancing the device performance in the upcoming years.

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An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

Abstract: An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

Cited by 15 publications

References 36 publications

ZnO nanostructured materials for emerging solar cell applications

ZnO nanostructured materials for emerging solar cell applications

Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT

Hybrid Nanocomposite Thin Films for Photovoltaic Applications: A Review

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