An integrated 6.2-11GHz SiGe inductorless injection locked frequency divider

et al. 2009

band merged into one, and the impedance bandwidth increased. The existence of the shortest arm of a C-shaped stub-1 (L st2 ) and a stub-2 (L st3 ) caused the highest resonant frequency to decrease and the impedance bandwidth to increase, as shown in Figure 2(c). Therefore, the impedance matching of the proposed antenna can be independently controlled for each frequency band. The antenna was designed and analyzed using the Ansoft High-Frequency Structure Simulator (HFSS V11) [8] and the optimal design parameters discovered were L ¼ L st1 ¼ 16 mm, L st2 ¼ 7 mm, and L st3 ¼ 6 mm. RESULTSABSTRACT: This article presents an eight-phase divide-by-4 silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD). The ILFD is based on a four-stage ring oscillator and was fabricated in the 0.35 lm SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. At the supply voltage V dd of 1.3 V and at the incident power of 0 dBm, the locking range is about 2.55 GHz from the incident frequency 12.7 to 15.25 GHz. The die area is 0.54 Â 0.54 mm 2 .ABSTRACT: Dual-wavelength clock recovery (CR) based on Stimulated Brillouin Scattering is realized. The maximum frequency spacing of two channels is theoretically analyzed and experimentally demonstrated. The total wavelength span of the CR scheme is investigated to be about 3.37 nm in experiment. Multiwavelength CR can be implemented within the span.

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An eight‐phase divide‐by‐4 SiGe HBT ring‐oscillator‐based injection‐locked frequency divider

Huang

et al. 2009

“…In conjunction with a dual-band VCO, dual-band frequency dividers (FDs) can form signal sources at different frequencies; the dual-band signal sources have wide application in frequency synthesizers and transceivers. Up to now, only a few SiGe ILFDs have been published [3][4][5][6], and none of the existing SiGe ILFDs is equipped the wide-band function. This letter proposes a wide-band differential Ä3 SiGe BiCMOS injection-locked frequency divider (ILFD), which covers dual band operation.…”

Section: Introductionmentioning

confidence: 99%

Wide‐band ÷3 injection locked frequency divider in 0.35 μm SiGe BiCMOS

Jang

Hsu

et al. 2011

A wide-band Ä3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single-stage voltagecontrolled oscillator with active-inductor and HBT diodes, and was fabricated in the 0.35 lm silicon-germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V DD ¼ 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the Ä3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 Â 0.63 mm 2 .

“…The SiGe BiCMOS circuits have received great attention recently. In the past, various SiGe single-band injection-locked frequency dividers (ILFDs) [1][2][3][4][5][6] have been studied. The goal of this article is to design dual-band divide-by-2 ILFD with a fourth order resonator.…”

Section: Introductionmentioning

confidence: 99%

“…With the large demand for radiating elements for dual-band handheld devices, the necessity for dual-frequency antenna is increasing nowadays [1,2]. Dual-frequency printed dipoles are good solutions because of their dual-band performances, reduced size, and low profile.…”

Section: Introductionmentioning

confidence: 99%

A dual‐band divide‐by‐2 injection locked frequency divider in 0.35‐μm SiGe BiCMOS

Jang

Shih

et al. 2010

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free‐running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low‐(high‐) frequency band. The divide‐by‐2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low‐(high‐) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762–2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586