2008
DOI: 10.1109/jlt.2008.927615
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An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode

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Cited by 9 publications
(8 citation statements)
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“…RTD-based oscillators have typically large noise levels, with typical single-sideband noise power density larger than -100 dBc/Hz at 100-kHz offset from the carrier frequency. This compares with the typical noise levels of other analogous electronic free-running oscillators presented recently in [156] In order to obtain further improvements in the phase-noise, external injection locking techniques are usually employed, as discussed in Chapter 6 of this book. The RTD-PD based OEO topology discussed here is robust method of providing stability of the free-running oscillations and further reduce fluctuations and noise without employing bulky external reference sources.…”
Section: Photonic Integrated Rtd-oeomentioning
confidence: 82%
See 1 more Smart Citation
“…RTD-based oscillators have typically large noise levels, with typical single-sideband noise power density larger than -100 dBc/Hz at 100-kHz offset from the carrier frequency. This compares with the typical noise levels of other analogous electronic free-running oscillators presented recently in [156] In order to obtain further improvements in the phase-noise, external injection locking techniques are usually employed, as discussed in Chapter 6 of this book. The RTD-PD based OEO topology discussed here is robust method of providing stability of the free-running oscillations and further reduce fluctuations and noise without employing bulky external reference sources.…”
Section: Photonic Integrated Rtd-oeomentioning
confidence: 82%
“…Several alternative OEO topologies to the one presented in Figure 7.1(d) showing stable and low-phase noise RF carriers have been reported in the last few years using either direct or external modulation of laser diodes [155], or heterojunction bipolar transistors [156], to name a few. However, in order to obtain RF signals in both electrical and optical domains they require several additional electronic and optoelectronic components such as phase-locked local oscillators, amplifiers, photodetectors, light emitters and/or amplifiers or modulators.…”
Section: Optoelectronic Oscillator (Oeo)mentioning
confidence: 99%
“…The proposed configurations employ either direct or external modulation of laser diodes ([9], and references therein), or heterojunction bipolar transistors (HBTs) [10], among others [11]. However, most of these schemes require several electronic and optoelectronic components such as phase-locked local oscillators, amplifiers, photo-detectors, light emitters, and/or amplifiers or modulators, which make them rather complex and costly for applications where compact solutions for the transmission and distribution of radio-frequency (RF) signals are needed [11].…”
Section: Introductionmentioning
confidence: 99%
“…They have interesting applications in optical communication links and precise test and measurement equipments [1]. Self-injection locking of OEOs generate low-phase noise microwave signals in both electrical and optical domains, without requiring highly-stable external RF sources, by injecting a part of the output signal into the oscillator through a high-quality ( Q ) or low loss energy storage element [1]-[4]. Several configurations have been reported to generate spectrally pure microwave signals using direct and external modulation of semiconductor lasers together with optical/optoelectronic injection schemes using an optical feedback route.…”
Section: Introductionmentioning
confidence: 99%
“…Compact OEO realization has been recently reported using heterojunction phototransistors (HPT) as electrical free-running oscillators [2]. These implementations however require RF amplifiers and erbium doped fiber amplifiers (EDFA), which are usually the major noise contributing elements [1]-[4], increasing as well the OEO package size and power consumption.…”
Section: Introductionmentioning
confidence: 99%