An innovative ion sensitive device based on side‐contacted field effect diode

Abstract

In this paper, side‐contacted field effect diode as an ion sensitive device is proposed to take advantages of field effect diodes family in sensing ionic species in solutions. To analyze the behavior of ion sensitive side‐contacted field effect diode, an accurate model has been developed in a simulation environment tool to mimic the characteristics of the solution and the results compared with the literature. While dual gate ion sensitive FETs have been introduced to beat the Nernst limit, results show that dual gate ion sensitive side‐contacted field effect diodes can provide better performance. Effects of various parameters such as silicon body thickness and doping concentration have been studied. In contrast of ISFETs, the proposed device offers more sensitivity at the thicker silicon body. Results indicate that dual gate ion sensitive side‐contacted field effect diodes can be regarded as an interesting candidate for bio‐sensing applications.