Abstract:In this paper, side‐contacted field effect diode as an ion sensitive device is proposed to take advantages of field effect diodes family in sensing ionic species in solutions. To analyze the behavior of ion sensitive side‐contacted field effect diode, an accurate model has been developed in a simulation environment tool to mimic the characteristics of the solution and the results compared with the literature. While dual gate ion sensitive FETs have been introduced to beat the Nernst limit, results show that du… Show more
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