An Accurate TCAD-Based Model for ISFET Simulation

Electrostatically Governed Debye Screening Length at the Solution-Solid Interface for Biosensing Applications

“…The hole (p) and electron (n) concentrations of the intrinsic semiconductor are adjusted to mimic the positive and negative ion concentrations calculated as: p = n = N Av c 0 × 10 –3 cm –3 where c 0 is the ionic strength of the solution. The effective density of states of conduction ( N C ) and valence ( N V ) bands are calculated as: N C = N V = ne E g /2 kT = p e E g /2 kT . The maximum mobility values of the holes and electrons are set to μ max p = 4.98 × 10 –4 cm 2 V –1 s –1 and μ max n = 6.88 × 10 –4 cm 2 V –1 s –1 , respectively, to replicate the behavior of Na + and Cl – ions in NaCl solution .…”

A new approach towards the Debye length challenge for specific and label-free biological sensing based on field-effect transistors

“…The effective density of states in the conduction ( N C ) and the valence ( N V ) bands are considered: N C = N V = ne E g /2 kT = pe E g /2 kT . 48 The maximum mobility of holes and electrons are μ p max = 4.98 × 10 −4 cm 2 V −1 s −1 and μ n max = 6.88 × 10 −4 cm 2 V −1 s −1 , respectively, to emulate the behaviour of Na + and Cl − ions in NaCl solution. 49 The surface potential ψ 0 at pH 7 and dissociation constants for SiO 2 are taken from literature, as well as the corresponding where N s is the fixed number of surface sites per unit area, is the surface proton activity and K a and K b are the surface dissociation constants.…”

A New Approach toward the Realization of Specific and Label‐Free Biological Sensing Based on Field‐Effect Devices

“…. [27] The maximum mobility of holes and electrons are set to µ p max = 4.98 × 10 -4 cm 2 V -1 s -1 and µ n max = 6.88 × 10 -4 cm 2 V -1 s -1 respectively, to emulate the behaviour of Na + and Clions in NaCl solution. [28] The surface potential ψ 0 at pH 7 and dissociation constants for gate oxide materials were taken from literature and the corresponding 0…”