An improved quasi two-dimensional model for short-channel MOSFETs

Hariharan, S.; Dutta, Aloke K.

doi:10.1016/0038-1101(94)00143-4

Cited by 4 publications

(1 citation statement)

References 8 publications

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“…In short‐channel device, the source and drain distance is comparable to MOS‐depletion width in the vertical direction. The threshold voltage in the short‐channel device has been studied accurately by solving the two‐dimensional Poisson's equation (Antoniadis, 1984; Hariharon and Dutta, 1995; Lee, 1973; Lim and Zhon, 1998; Moneda, 1973; Viswanathan et al , 1995). Generally, two approaches have been adopted by workers to study the short‐channel effect which includes reduction in threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Edge potential effect on the operation of short‐channel devices

Singh

Gurunarayanan²,

Ramachandran³

et al. 2003

Microelectronics International

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We have solved the two‐dimensional Poisson's equation for short‐channel device under the assumption that even in the absence of drain‐to‐source voltage (VDS), a potential occurs at the edges (source/drain) due to discontinuity at the semiconductor – channel interface in addition to built‐in‐potential. We have developed some new relations governing the operation of short‐channel devices. Analysis of relation shows that in the absence of drain‐to‐source voltage (or for very low drain‐to‐source voltage), the position of minimum potential will occur exactly at the middle of the channel. The short‐channel effect is not only observed due to applied drain‐to‐source voltage, but also due to edge potential when no bias is applied between drain and source.

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