An improved GaAs MESFET model for SPICE

McCamant, A.J.; McCormack, G.D.; Smith, D.

doi:10.1109/22.130988

Cited by 126 publications

(30 citation statements)

References 6 publications

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“…Unfortunately, the high-order derivatives of those empirical models, partic-ularly the third-order derivative, are not accurate enough to meet the requirements of the practical designs [4]. For instance, the "Curtice" type models (e.g., Materka [11], Statz [12], TOM3 [13] model, etc.) and "Angelov" type models are derivable, the accuracy of high-order derivatives of the I-V characteristics is not satisfactory (taking the third-order derivative for example as illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

A hybrid model of III-V FETs with accurate high-order derivatives

Zhang

Zhu

et al. 2017

IEICE Electron. Express

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In this article, a hybrid model for the current-voltage (I-V) characteristic and its high-order derivatives of III-V FETs is presented. The proposed model divides the entire operating region into several subregions and chooses optimum models in each subregion. The artificial neural network (ANN) techniques are employed to smoothly link the boundaries. The validity of this model has been verified by comparing the measurement and modeled results of a GaAs pHEMT.

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Section: Introductionmentioning

confidence: 99%

A hybrid model of III-V FETs with accurate high-order derivatives

Zhang

Zhu

et al. 2017

IEICE Electron. Express

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“…Among numerous available computer programs, SPICE is a very popular tool dedicated for the analysis of electronic circuits. Five models of MESFET made of gallium arsenide (GaAs-MESFET) of different accuracy (LEVEL) such as Curtice model (LEVEL 5 1) [1], Raytheon-Statz (R-S) model (LEVEL 5 2) [2], Triquint Own Model TOM (LEVEL 5 3) [3], Parker-Skellern model (LEVEL 5 4) [4] and TOM-2 model (LEVEL 5 5) [5] are built-in in SPICE version 9.2.…”

Section: Introductionmentioning

confidence: 99%

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Zarębski

Bisewski

2008

Int J Numerical Modelling

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SUMMARYIn the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon-Statz model built-in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs-the transistor CRF24010 offered by Cree, Inc. is chosen for investigations.

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“…To increase the simulation accuracy, much effort has been put into improving the smallsignal models of the MESFETs and pHEMTs over the years [1][2][3][4][5][6][7]. In modeling FETs using lumped-element equivalent circuits, numerical optimization techniques are used.…”

Section: Introductionmentioning

confidence: 99%

Accurate Small-Signal Model Extraction for pHEMT on GaAs

Wang

Yan

2007

Int J Infrared Milli Waves

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An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.

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An improved GaAs MESFET model for SPICE

Cited by 126 publications

References 6 publications

A hybrid model of III-V FETs with accurate high-order derivatives

A hybrid model of III-V FETs with accurate high-order derivatives

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Accurate Small-Signal Model Extraction for pHEMT on GaAs

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