2007
DOI: 10.1007/s10762-007-9288-7
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Accurate Small-Signal Model Extraction for pHEMT on GaAs

Abstract: An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling metho… Show more

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Cited by 4 publications
(3 citation statements)
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“…In each generation, the distances between chromosomes are measured and used to terminate the algorithm if these distances are very close. Work in [48] uses T Pop criterion for termination by adding distances among individuals and making sure it is smaller than a predefined threshold. The other two classes are T Bud and T SFB .…”
Section: Related Workmentioning
confidence: 99%
“…In each generation, the distances between chromosomes are measured and used to terminate the algorithm if these distances are very close. Work in [48] uses T Pop criterion for termination by adding distances among individuals and making sure it is smaller than a predefined threshold. The other two classes are T Bud and T SFB .…”
Section: Related Workmentioning
confidence: 99%
“…Before calculating the intrinsic parameters, we subtracted the extracted extrinsic parameters from the measured Sparameters of the MHEMTs by using a simple topology in the ADS schematic window as shown in figure 9. The intrinsic parameters of the 30 μm × 2 MHEMT biased at V GS of −0.7 V and V DS of 1.5 V were calculated in our measurement frequency range by using the intrinsic Y-parameter expressions [7,[14][15][16][17][18]. The extracted values of all intrinsic parameters are listed in table 2.…”
Section: Extraction Proceduresmentioning
confidence: 99%
“…Because of its high power handling capabilities, GaN based pHEMTs have attracted increasing interests [4][5]. Owing to its large band-gap, GaN is particularly suitable for high frequency, high power and high temperature applications [6][7]. In addition, AlGaN/GaN material is suitable for applications in the transmission and distribution of electric power [8][9].…”
Section: Introductionmentioning
confidence: 99%