A hybrid model of III-V FETs with accurate high-order derivatives

Abstract

In this article, a hybrid model for the current-voltage (I-V) characteristic and its high-order derivatives of III-V FETs is presented. The proposed model divides the entire operating region into several subregions and chooses optimum models in each subregion. The artificial neural network (ANN) techniques are employed to smoothly link the boundaries. The validity of this model has been verified by comparing the measurement and modeled results of a GaAs pHEMT.