An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

Tian, Kai; Hallén, Anders; Qi, Jinwei; Ma, Shenhui; Fei, Xinxing; Zhang, Anping; Liu, Weihua

doi:10.1109/ted.2019.2905636

Cited by 41 publications

(22 citation statements)

References 30 publications

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“…Finally, the switching performance parameter of the device was extracted through a double-pulse test (DPT). The active areas of all the DUT were set to 0.3 cm 2 [42], which is similar to that of commercial devices [43]. Figure 14a plots the full waveform of the ST-MOSFET.…”

Section: Dynamic Charateristicsmentioning

confidence: 99%

“…The load inductance was set to 300 µH, and the first gate voltage pulse lasted 5 µs so that the load current flow was 20 A. The body diode of the same device as the DUT was used as a freewheeling diode, and the supply voltage was 1200 V. In this paper, turn-on time (TON) and turn-off time (TOFF) are defined as follows [43][44][45].…”

Section: Dynamic Charateristicsmentioning

confidence: 99%

“…where TD-ON is the turn-on delay time (from 10% of VG to 90% of VD at the rising edge), TR is the rise In this paper, turn-on time (T ON ) and turn-off time (T OFF ) are defined as follows [43][44][45].…”

Section: Dynamic Charateristicsmentioning

confidence: 99%

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Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Cheon

Kim

2020

Electronics

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In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shielding region on the capacitance is analyzed, and the dynamic characteristics of the three structures are compared. The input capacitance is almost identical in all three structures. On the other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared to C-UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it improves high frequency figure of merit (HF-FOM: RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 mΩ∙nC, respectively, which is improved by 26% and 42% compared to C-UMOSFET. The switching speed of DT-MOSFET and ST-MOSFET are maintained at the same level as the C-UMOSFET. The switching energy loss and power loss of the DT-MOSFET and ST-MOSFET are slightly improved compared to C-UMOSFET.

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Section: Dynamic Charateristicsmentioning

confidence: 99%

Section: Dynamic Charateristicsmentioning

confidence: 99%

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Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Cheon

Kim

2020

Electronics

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“…However, the use of SG MOSFET will usually increase the resistance of the device under the same cell size [11]- [13], and make the electric field crowding in the gate oxide under high voltage [26], which will affect the reliability of the device for long-term use. The values of HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×Ron,sp) are usually compared to measure the performance of the device under high-frequency operation [14]- [15]. These values are not only related to the Crss and Qgd, but also related to the specific on-resistance (Ron,sp).…”

Section: Introductionmentioning

confidence: 99%

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Wang

Bao

et al. 2022

IEEE J. Electron Devices Soc.

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A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV 2 /Ron,sp) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (Crss) and gate-drain charge (Qgd) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×R on,sp) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%.

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“…However, these structures required multiple depositions and etching steps that complicate the fabrication process. Superjunction structures and wide bandgap SiC material devices are alternative ways to provide high-voltage and low-R on,sp solutions [22][23][24][25]. However, the built-in superjunction depletion layer limits the scalability to lower voltages (<500 V) [3].…”

Section: Introductionmentioning

confidence: 99%

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

et al. 2020

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A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

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An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

Cited by 41 publications

References 30 publications

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

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