An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe<sub>2</sub> Hetero-Junction

Kamaei, Sadegh; Saeidi, Ali; Jazaeri, Farzan; Rassekh, Amin; Oliva, Nicoló; Cavalieri, Matteo; Lambert, Benjamin; Ionescu, Adrian M.

doi:10.1109/led.2020.2974400

Cited by 13 publications

(4 citation statements)

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“…This inherent characteristic enhances the response speed and switching gains, as observed in the 1D Te/2D Bi 2 O 2 Se heterodiode. [19] In 2020, single SWCNT combined with multilayer WSe 2 was utilized to construct 1D/2D mixed-dimensional atomic heterojunction, [155] featuring an ultimate-scaled nanometer functional area and pronounced band-to-band tunneling and thermal emission phenomena.…”

Section: Mixed-dimensional 1d/2d Heterojunctionsmentioning

confidence: 99%

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Meng,

Wang,

Wang

et al. 2023

Advanced Materials

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Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next‐generation integrated circuit chips and telecommunication technologies. Thanks to strategic material design and device integration, anti‐ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti‐ambipolar heterojunctions. First, we discuss the fundamental operating mechanisms of anti‐ambipolar devices. After that, potential materials used in anti‐ambipolar devices are discussed with particular attention to 2D‐based, 1D‐based, and organic‐based heterojunctions. Next, we overview the primary device applications employing anti‐ambipolar heterojunctions, including anti‐ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti‐ambipolar heterojunctions and their applications are also emphasized.This article is protected by copyright. All rights reserved

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Section: Mixed-dimensional 1d/2d Heterojunctionsmentioning

confidence: 99%

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Meng,

Wang,

Wang

et al. 2023

Advanced Materials

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“…The development of wearables and smart sensor networks as emerging IoT technologies, require low-power and large-scale integration systems to achieve energy efficient battery-operated electronics systems with small form factor. Meanwhile, two-dimensional (2D) transition metal dichalcogenides (TMDs) have been considered as a candidate material system for realizing scaled semiconducting devices and circuits [2][3][4] , owing to the atomically ultrathin body for the enhanced electrostatic control 5,6 and the possibility of assembling atomically sharp van der Waals heterojunctions 7,8 . Despite the advances made in TMD FET miniaturization, the power dissipation issue remains unsolved, similar to silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) technology.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Kamaei,

Liu,

Saeidi

et al. 2023

Nat Electron

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The demand for low power, large-scale integration, and novel functionality has been increasing since the emergence of the internet of things (IoT) and Edge Artificial Intelligence (AI) applications requiring real-time energy efficient information processing. In this work, the integration of doped high-k ferroelectric and linear high-k dielectric gate stacks with 2D material systems is developed as a versatile technological solution for building robust energy-efficient electronic functions. In this context, we report the co-integration of three major types of devices, offering the first 2D hybrid platform supporting the co-design of energy efficient Von-Neumann and neuromorphic circuits. The negative capacitance (NC) of the ferroelectric layer is used in our platform as a technology booster to achieve significantly improved subthermionic electronic switches. The performance of four types of logic switches on this platform: 2D MOSFET, 2D/2D TFET, NC 2D MOSFET, and NC 2D/2D TFET, are reported, showing superior performance of NC devices compared to their conventional baseline 2D MOSFET and 2D/2D TFET. Importantly, this work shows the first NC 2D/2D TFET integrated with NC 2D MOSFET that achieves an average swing of 50 mV/dec over 2.5 decades of current for TFET and 45 mV/dec over 3 decades of I D for MOSFET. Furthermore, we exploit the same ferroelectric gate stacks on 2D devices to build artificial synapses and our platform demonstrates a good capability to mimic various synapse behaviors including long-term potentiation, long-term depression, and spike-amplitude-dependent plasticity. This prototypical demonstration paves the way toward practical implementations of 2D platforms in emerging Edge AI technologies, enabling energy-efficient operation, high integration density, and excellent scalability while co-integrating for the first time logic switches and neuromorphic devices.

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“…Solid-state tungsten oxyselenide has also been recently shown to efficiently dope graphene through direct charge transfer . Individual 1D metallic single-walled carbon nanotubes (SWCNTs), in turn, have been observed to electronically couple to 2D semiconductors in vertical van der Waals heterojunctions. − Meanwhile, a recent report has shown that an MDHJ consisting of a semiconducting multiwalled CNT and multilayer MoS 2 exhibits gate-tunable band-to-band tunneling (BTBT) in reverse bias . A wrap-around gate architecture utilizing monolayer n-type MoS 2 as the gate for a p-type SWCNT channel is therefore expected to be electrostatically effective in creating strong inversion, as the electronic band gap of MoS 2 increases from 1.2 to >2 eV in the monolayer limit, creating large conduction and valence band discontinuities at the material interface.…”

mentioning

confidence: 99%

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

et al. 2022

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Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p–n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III–V semiconductors.

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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe₂ Hetero-Junction

Cited by 13 publications

References 13 publications

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Cited by 13 publications

References 13 publications

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe₂ Hetero-Junction