Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

Abstract

Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p–n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III–V semiconductors.

Phonon anharmonicity and thermal conductivity of two-dimensional van der Waals materials: A review

“…2D vdW materials have broad application prospects in microelectronic devices such as field-effect transistors [32,99,100], diodes [101][102][103], and basic logic circuits [104][105][106]. One of the key issues in the design of these devices is how to dissipate heat efficiently, because in many cases, smaller electronic components generate a higher density of excess heat.…”

Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode

“…A highly transparent electrode has been predicted to increase the power conversion efficiency of photovoltaics and the responsivity of photodetectors . Recently, it has been reported that the gate modulation of 2D material-based electronic and optoelectronic devices can be enhanced with isolated SWCNTs − and the SWCNTs in dispersion. , Compared to the 2D/2D material heterostructure, a stronger electric field could exist at the line–plane interface of MoS 2 /SWCNTs, which facilitates the charge carriers to pass through the interface . However, the 2D material-based devices with the press-transferred SWCNT film used as either an electrode or a heterostructure component have not been realized so far.…”

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

“…Through van der Waals force binding, a one-dimensional (1D) and a two-dimensional (2D) material can form unique mixed-dimensional heterostructures that inherit the unique physical properties of van der Waals 2D/2D heterostructures, but also have rich stack configurations, providing new manipulable freedom to adjust the structure and properties of heterostructures [ 31 , 32 , 33 , 34 , 35 , 36 ]. The versatility of heterostructure fabrication provides researchers with a new level of control over the resulting structure and properties.…”