“…[18] reported a slightly better Q crit (7%) of a conventional 6T-cell over 8T-cell for a 90 nm CMOS Technology, while in [19] it was found that the Q crit of a 65 nm 8T cell with minimum sized transistors was 6% lower than a 6T cell designed with minimum size transistors (this later result is not contradictory with the previous one, as usually not all the transistors of a conventional 6T-cell are minimum sized). Other studies have shown that Q crit alone is not enough to quantify the device soft error rate [20,21], since the sensitivity to radiation is also determined by the charge collection efficiency and layout area of sensitive nodes. The aim of this work is complementing these and other previous work based exclusively on Q crit analysis, by reporting experimental results of alpha particle SER in minimum sized 8T-cells compared to 6T-cells, and providing practical guidelines to improve memory hardening to radiation.…”