2019
DOI: 10.1016/j.mejo.2019.05.020
|View full text |Cite
|
Sign up to set email alerts
|

CLEAR: Cache Lines Error Accumulation Reduction by exploiting invisible accesses

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
4
1
1

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(1 citation statement)
references
References 27 publications
0
1
0
Order By: Relevance
“…Emerging memory technologies, particularly those based on novel materials, are poised to address the limitations of traditional memory solutions and catalyze advancements in the IoT and edge computing, embedded devices, and high-performance multi-core systems. [49][50][51][52][53][54] PCM emerges as a particularly promising candidate, offering a compelling array of attributes that make it well-suited for energy-constrained environments typical of IoT edge devices. PCM utilizes chalcogenide glass compounds, such as Ge2Sb2Te5 (GST), which exhibit the ability to transition between distinct physical states-amorphous and polycrystalline-through the application of Joule heating.…”
Section: Phase Change Memorymentioning
confidence: 99%
“…Emerging memory technologies, particularly those based on novel materials, are poised to address the limitations of traditional memory solutions and catalyze advancements in the IoT and edge computing, embedded devices, and high-performance multi-core systems. [49][50][51][52][53][54] PCM emerges as a particularly promising candidate, offering a compelling array of attributes that make it well-suited for energy-constrained environments typical of IoT edge devices. PCM utilizes chalcogenide glass compounds, such as Ge2Sb2Te5 (GST), which exhibit the ability to transition between distinct physical states-amorphous and polycrystalline-through the application of Joule heating.…”
Section: Phase Change Memorymentioning
confidence: 99%