An experimental and theoretical framework for identifying the band type and the carrier transport properties of transition metal dichalcogenides heterostructures

Polumati, Gowtham; Adepu, Vivek; Siddartha, Sukruth; Kolli, Chandra Sekhar Reddy; Kanungo, Sayan; Sahatiya, Parikshit

doi:10.1007/s41127-023-00062-6

Cited by 3 publications

References 71 publications

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Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector

Gupta,

Goswami,

Pandey

2024

ACS Appl. Electron. Mater.

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This paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible–near-infrared (vis–NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 × 104%; detectivity, 6.87 × 1013 Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon.

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Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector

Gupta,

Goswami,

Pandey

2024

ACS Appl. Electron. Mater.

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Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

Polumati,

Kolli,

Kumar

et al. 2024

Sci Rep

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This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

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Gate Modulation of Barrier Height of Unipolar Vertically Stacked Monolayer ReS2 / MoS2 Heterojunction.

Polumati,

Kolli,

kumar

et al. 2024

Preprint

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This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in IDS (drain current) Vs VDS (drain voltage) for different VGS (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 30.48 cm2 V-1 s-1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV-visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

show abstract

An experimental and theoretical framework for identifying the band type and the carrier transport properties of transition metal dichalcogenides heterostructures

Cited by 3 publications

References 71 publications

Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector

Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

Gate Modulation of Barrier Height of Unipolar Vertically Stacked Monolayer ReS2 / MoS2 Heterojunction.

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