Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector

Abstract

This paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible–near-infrared (vis–NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 × 104%; detectivity, 6.87 × 1013 Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon.