2024
DOI: 10.1038/s41598-024-72448-2
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Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

Gowtham Polumati,
Chandra Sekhar Reddy Kolli,
Aayush Kumar
et al.

Abstract: This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum tran… Show more

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