An evolution to Cu concentration on ZnTe thin films: functionality as interface layer to CdTe solar cells

Suthar, Deepak; Sharma, Ritika; Himanshu, -; Thakur, Anup; Dhaka, M.S.

doi:10.1007/s00339-023-06412-8

Cited by 9 publications

(6 citation statements)

References 50 publications

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“…The crystallites size is listed in Table (1) estimated by Scherer's formula where it shows that the ZnTe at 473 K have high C.S from other thin film, the decreases in FWHM of major peak which result increases in C.S from 8.6 to 16.73 this result agrees with [6]. As the annealing temperature increases to 373 and 473 K, there is a decrease in both microstrain and dislocation density.…”

Section: Fig 1 X-ray Diffraction Pattern For As Deposited Znte Films ...supporting

confidence: 67%

“…The XRD spectrum of the ZnTe films show in 111) orientation is slightly swung towards upper 2θ with heat-treated as in [6].…”

Section: Resultsmentioning

confidence: 99%

“…Need to new nanostructured material with better properties. Due to appearances obtained at the deposition method such as: in the visible spectrum high transparency, low resistivity [5,6] ZnTe are sensitive materials in the (green spectral region) [5] with wide energy band-gap (2.26) eV [7,8] low electronic affinity (3.53) eV [5] nanostructured ZnTe films are widely used in various fields such as laser diodes, photodetectors, light emitting diodes, gas sensors, field emission and solar cells [9]. ZnTe can be used as window materials multi-layer solar cell [8] the crystal structure is Cubic structure chalcopyrite with the lattice constant a = 6.101 Å [10].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and investigation of zinc telluride thin films

Athab¹,

Hussein²

2023

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Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of cubic phase with (111) preferred reflection and grain size is enhanced from 8.6 to 16.7 nm with annealing. Optical properties where optical bandgap energy values slightly decreased (2.3-2.2) eV as the annealing temperatures.

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Section: Fig 1 X-ray Diffraction Pattern For As Deposited Znte Films ...supporting

confidence: 67%

“…The XRD spectrum of the ZnTe films show in 111) orientation is slightly swung towards upper 2θ with heat-treated as in [6].…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication and investigation of zinc telluride thin films

Athab¹,

Hussein²

2023

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“…Electronhole pairs form under light irradiation with energy greater than the E g for the Cu 2 O layer and, as a result of that, both the photo-induced electrons and holes migrate towards the Ag electrodes. The oxygen ions in this case are desorbed by the holes as they move to the surface, as shown by Equations ( 7) and (8).…”

Section: Resultsmentioning

confidence: 99%

“…Semiconducting materials with substantially broader bandgaps include ZnO, TiO 2 , GaN, ZnTe, and ZnS [3][4][5][6][7][8], in addition to copper oxides, and are utilized for the photodetection of ultraviolet rays. The following are some of the most widely used types of copper oxides: Cu 4 O 3 (paramelaconite), cupric oxide (CuO), and cuprous oxide (Cu 2 O).…”

Section: Introductionmentioning

confidence: 99%

High Performance of Nanostructured Cu2O-Based Photodetectors Grown on a Ti/Mo Metallic Substrate

et al. 2023

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In this work, cuprous oxide (Cu2O) thin films were prepared using a simplistic sputtering technique. The films were grown on both traditional fluorine-doped tin oxide (FTO) and Ti-metallic substrates. X-ray diffraction applied for investigation of the crystal structure proved that the Cu2O layer acquires the cubic structure with a (111) main peak at 2θ of 36.46°. The optical absorption and transmission were detected through the utilization of a UV-Vis spectrophotometer, and the optical bandgap for the Cu2O layer was determined to be ~2.15 eV using Tauc’s equation. XPS and scanning electron microscopy were also performed for chemical structure and morphological investigation, respectively. The optoelectronic behaviors for the prepared samples were carried out using a Keithley source meter; the photocurrent density was measured in a range of applied voltage between −1 and 1 volt under the illumination of a xenon lamp with a power density of 100 mWcm−2. External quantum efficiency, sensitivity, responsivity, and detectivity were computed using proprietary models based on the experimental data.

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Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films

Alvarez,

Calderón-Martínez,

Rodríguez-Melgarejo

et al. 2024

J Mater Sci: Mater Electron

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Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluride, the light-absorbing layer in photovoltaic devices. Out of the various deposition techniques, radio frequency sputtering is one of the most versatile and widely employed in research laboratories and industry. In this work, is presented a thorough characterization of ZnTe and ZnTe:Cu films grown by sputtering as a function of substrate temperature (Ts = 300 and 350 °C) and copper concentration (1, 3 and 5 at%). Besides the structural (X-ray diffraction), optical (UV-Vis spectroscopy) and electrical (Hall effect) characterizations, the present study included other studies relevant for optoelectronic applications such as photoluminescence, photoconductivity (under constant or transient illumination) and, in order to determine the effect of copper on the work function, Kelvin probe force microscopy was applied to the samples. Our results show important improvements in crystallite size, conductivity and photoconducting properties derived from the incorporation of copper in the ZnTe lattice.

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An evolution to Cu concentration on ZnTe thin films: functionality as interface layer to CdTe solar cells

Cited by 9 publications

References 50 publications

Fabrication and investigation of zinc telluride thin films

Fabrication and investigation of zinc telluride thin films

High Performance of Nanostructured Cu2O-Based Photodetectors Grown on a Ti/Mo Metallic Substrate

Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films

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