Ag0.8Cu0.2InSe2 (ACIS) alloys and thin films have been fabricated with different vacuum annealing temperatures Thin film has been deposited by thermal evaporation method of vacuum of 1.3*10-6 Torr with thickness about 700 nm at R.T and vacuum annealing at temperatures (373,473) K for 1 hour. The deposition in a vacuum on glass substrates. The crystal structure of deposited thin film had been examined by XRD and AFM analysis, which confirms the formation of tetragonal phase in 112 direction and these films are polycrystalline in nature having ideal stoichiometric. The optical properties of these films are determined for the wavelength range 400 - 1000 nm. The band gap of the Ag0.8Cu0.2InSe2 films was evaluated to be (1.48-1.42) eV.

Copper selenide (Cu2Se) thin films were prepared by thermal evaporation at RT with thickness 500 nm. The heat-treating for (400 &500) K for the absorber layer has been investigated. This research includes, studying the structural properties of X-ray diffraction (XRD) that show the Cu2Se thin film (Cubic) and has a polycrystalline orientation prevalent (220). Moreover, studying the effect of annealing on their surface morphology properties by using Atomic Force Microscopy AFM. Optical properties were considered using the transmittance and absorbance spectra had been recorded when wavelength range (400 - 1000) nm in order to study the absorption coefficient and energy gap. It was found that these films had allowed direct transition optical band gap which decreases with the increasing effect of annealing, while it increasing with the increase in the annealing temperature at all ratio UV-Visible transmission spectrum. Hall Effect results presented that all thin films have P-type. It is quite possible that the heterojunction (p-Cu2Se/n-Si) solar cell device is a buried. The illumination current- voltage (I-V) characteristics showed that the solar cell, with (t=500 nm and T=500 K ) has highest efficiency (η =1.4 %).

A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.

The (NiTsPc) thin films operating by vacuum evaporation technique are high recital and good desirable for number of applications, were dumped on glass substrates at room temperature with (200±20nm) thickness and doped with Al at different percentage (0.01,0.03) besides annealing the sample with 200˚C for 1 hours . The stimuluses of aluminum dopant percentage on characterization of the dropped (Ni Ts Pc) thin films were studied through X-ray diffraction in addition from the attained results, were all the films have polycrystalline in nature, as well the fallouts of XRD aimed at film illustrations polycrystalline, depending on the Al ratio doping, the results, SEM exposed the surface is regularly homogeneous. Utilizing first-ideologies calculations, we demonstration that appropriate band gaps and optical properties adjacent to that of direct energy gap intended for wholly samples.

Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of cubic phase with (111) preferred reflection and grain size is enhanced from 8.6 to 16.7 nm with annealing. Optical properties where optical bandgap energy values slightly decreased (2.3-2.2) eV as the annealing temperatures.