An Energy-Efficient and Bandwidth-Scalable DWDM Heterogeneous Silicon Photonics Integration Platform

Liang, Di; Srinivasan, Sudharsanan; Kurczveil, Géza; Tossoun, Bassem; Cheung, Stanley; Yuan, Yuan; Descos, Antoine; Hu, Yingtao; Huang, Zhihong; Sun, Peng; Vaerenbergh, Thomas Van; Zhang, Chong; Zeng, Xiaoge; Liu, Songtao; Bowers, John E.; Fiorentino, Marco; Beausoleil, Raymond G.

doi:10.1109/jstqe.2022.3181939

Cited by 36 publications

(27 citation statements)

References 121 publications

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“…Moreover, MOS-driven silicon photonic devices can be heterogeneously integrated with other semiconductor materials to achieve even better E-O efficiency, such as III–V compound semiconductors and TCOs 17 , 18 . The tunable Si-MRRs integrated with III-Vs and TCOs have experimentally demonstrated significantly higher E-O wavelength tunability with thin high-κ hafnium oxide (HfO 2 ) insulators 19 , 20 .…”

Section: Introductionmentioning

confidence: 99%

On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array

Hsu

Nujhat

Kupp

et al. 2023

Sci Rep

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Silicon microring resonators (Si-MRRs) play essential roles in on-chip wavelength division multiplexing (WDM) systems due to their ultra-compact size and low energy consumption. However, the resonant wavelength of Si-MRRs is very sensitive to temperature fluctuations and fabrication process variation. Typically, each Si-MRR in the WDM system requires precise wavelength control by free carrier injection using PIN diodes or thermal heaters that consume high power. This work experimentally demonstrates gate-tuning on-chip WDM filters for the first time with large wavelength coverage for the entire channel spacing using a Si-MRR array driven by high mobility titanium-doped indium oxide (ITiO) gates. The integrated Si-MRRs achieve unprecedented wavelength tunability up to 589 pm/V, or VπL of 0.050 V cm with a high-quality factor of 5200. The on-chip WDM filters, which consist of four cascaded ITiO-driven Si-MRRs, can be continuously tuned across the 1543–1548 nm wavelength range by gate biases with near-zero power consumption.

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Section: Introductionmentioning

confidence: 99%

On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array

Hsu

Nujhat

Kupp

et al. 2023

Sci Rep

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“…Within this platform, we demonstrate on-chip QD-based comb lasers, MOSCAP microring modulators, memristive photonic non-volatile phase shifters, optical injection-locked laser neurons, optical power monitors, and a novel tensorized optical neural network architecture capable of greatly reducing the total footprint and energy consumption of the PNN. Our silicon photonic neural networks are built using devices which are all part of the heterogeneous III-V-on-Silicon platform and have already been characterized in the lab and well-understood within our group [4]. The multiple input wavelengths will be provided by a quantum dot (QD) comb laser.…”

Section: Introductionmentioning

confidence: 99%

Silicon photonics for energy-efficient neuromorphic computing

Tossoun

2023

Emerging Applications in Silicon Photonics III

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New machine learning algorithms such as deep neural networks and the availability of large datasets have created a large drive towards new types of hardware capable of executing these algorithms with higher energy-efficiency. Recently, silicon photonics has emerged as a promising hardware platform for neuromorphic computing due to its inherent capability to process linear and non-linear operations and transmit a high bandwidth of data in parallel. At Hewlett Packard Labs, an energy-efficient dense-wavelength division multiplexing (DWDM) silicon photonics platform has been developed as the underlying foundation for innovative neuromorphic computing architectures. The latest research on our silicon photonic neuromorphic platform will be presented and discussed.

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“…The heterogeneous platform described in this work has shown the technical capability and fabrication compatibility to integrate all building blocks, such as heterogeneous quantum dot (QD) optical frequency comb (OFC) laser sources [6], [9]- [14], wavelength (de-) interleavers [15], [16], micro-ring modulators (MRRs) [8], [17]- [19], photodetectors (PDs) [20]- [23], and semiconductor optical amplifiers (SOAs) [24] to form a space division multiplexing (SDM)-DWDM transceiver as shown in Fig. 1 [6], [7]. Within this architecture, there is a practical limit to the number of MRRs that can be cascaded onto a single bus waveguide due to crosstalk (XT), off resonance insertion loss (IL), and free spectral range (FSR) limitation due to finite bend radius, [24]- [27].…”

Section: Introductionmentioning

confidence: 99%

“…Schematic of the heterogeneous III-V/Si DWDM 40 channel transceiver with integrated OFC, MOSCAP (de-) interleavers, MRRs, SOAs, and PDs. [7] 2 > REPLACE THIS LINE WITH YOUR MANUSCRIPT ID NUMBER (DOUBLE-CLICK HERE TO EDIT) < On-chip wavelength (de-)interleavers solve this problem by spatially dividing even and odd numbered OFC frequencies onto separate waveguides [16], [27], [28]. For our architecture, each waveguide will have a half number (10) of the total MRR count (20), but with the channel spacing doubled.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

Cheung

Yuan

Peng

et al. 2022

J. Lightwave Technol.

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We discuss the design and demonstration of a space and dense wavelength division multiplexed heterogeneous III-V/Si transmitter based on a single multi-wavelength quantum dot laser source and ultra-power-efficient metal-oxide-semiconductor capacitor (MOSCAP) (de-)interleaver. This paper begins by introducing a transceiver architecture capable of > 1 Tb/s transmission with < 1.5 pJ/bit power consumption, followed by a detailed discussion of the heterogeneous laser source and (de-)interleaver. The O-band quantum dot laser, based on a compound cavity design, has a FSR ~ 64 GHz with a 1σ variation of ~ 1.08 GHz and a measured relative intensity noise (RIN) of ~ -144 dB/Hz for the largest comb peak. The single-ring-assisted asymmetric Mach-Zehnder interferometer (1-RAMZI) MOSCAP (de-)interleaver exhibit cross-talk (XT) levels down to -27 dB for tuning powers of 10.0 nW. Finally, to the best of our knowledge, we have demonstrated for the first time, a simultaneous wavelength and space division multiplexed transmitter fabricated on a heterogeneous III-V-on-silicon platform. Experiments show (de-)interleaved 17 optical comb lines, each modulated at 25 Gb/s non-return-to-zero (NRZ) for an aggregate bandwidth of 425 Gb/s.

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An Energy-Efficient and Bandwidth-Scalable DWDM Heterogeneous Silicon Photonics Integration Platform

Cited by 36 publications

References 121 publications

On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array

On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array

Silicon photonics for energy-efficient neuromorphic computing

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

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