Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

Abstract

We discuss the design and demonstration of a space and dense wavelength division multiplexed heterogeneous III-V/Si transmitter based on a single multi-wavelength quantum dot laser source and ultra-power-efficient metal-oxide-semiconductor capacitor (MOSCAP) (de-)interleaver. This paper begins by introducing a transceiver architecture capable of > 1 Tb/s transmission with < 1.5 pJ/bit power consumption, followed by a detailed discussion of the heterogeneous laser source and (de-)interleaver. The O-band quantum dot laser, based on a compound cavity design, has a FSR ~ 64 GHz with a 1σ variation of ~ 1.08 GHz and a measured relative intensity noise (RIN) of ~ -144 dB/Hz for the largest comb peak. The single-ring-assisted asymmetric Mach-Zehnder interferometer (1-RAMZI) MOSCAP (de-)interleaver exhibit cross-talk (XT) levels down to -27 dB for tuning powers of 10.0 nW. Finally, to the best of our knowledge, we have demonstrated for the first time, a simultaneous wavelength and space division multiplexed transmitter fabricated on a heterogeneous III-V-on-silicon platform. Experiments show (de-)interleaved 17 optical comb lines, each modulated at 25 Gb/s non-return-to-zero (NRZ) for an aggregate bandwidth of 425 Gb/s.

Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters

“…Ring assisted asymmetric MZIs (RAMZIs) find use as filters for flat-top response with improved channel XT 28 , 36 , 44 , 45 . They also find use as linearized transfer functions for improved bit resolution in optical neural networks (ONNs) 78 as well as RF photonics 79 .…”

“…The ideal ring resonator coupling for a 1-RAMZI occurs at κ r = 0.89. Details of this device under volatile SISCAP phase shift operation can be found in 28 , 36 , 44 , 45 .…”

“…Recently, we have leveraged our heterogeneous III-V/Si optical interconnect platform 28 , 29 to integrate memristors based on semiconductor-insulator-semiconductor capacitors (SISCAP). This platform is suitable for complete device integration of quantum dot (QD) comb lasers 30 – 33 , III-V/Si SISCAP ring modulators 34 – 36 , Si-Ge avalanche photodetectors (APDs) 37 – 40 , QD APDs 28 , 41 , in-situ III-V/Si light monitors 42 , 43 , III-V/Si SISCAP optical filters 44 , 45 , and non-volatile phase shifters 17 – 19 , 22 , 46 – 50 , which are necessary for a fully integrated optical computing chip. These memristors are defined by the semiconductor-oxide interface and act as non-volatile phase shifters due to a multitude of effects described previously.…”

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

“…We address the aforementioned challenges by demonstrating a heterogeneous III-V/Si photonic platform capable of non-volatile optical functionality via the CTM effect. In addition, this platform is suitable for seamless integration of quantum dot (QD) comb lasers [51][52][53][54] , III-V/Si MOSCAP ring modulators [55][56][57] , Si-Ge avalanche photodetectors (APDs) [58][59][60][61] , QD APDs 62,63 , in-situ III-V/Si light monitors 64,65 , III-V/Si MOSCAP optical filters 66,67 , and non-volatile phase shifters [38][39][40][41]68 , which are all essential towards realizing a fully integrated optical chip. We believe the co-integration of silicon photonics and non-volatile CTM memory provides a possible near term path towards eliminating the von-Neumann bottleneck as well as playing a role in energy efficient, non-volatile large scale integrated photonics such as: neuromorphic/brain inspired optical networks 5,6,15,26,[69][70][71][72][73][74] , optical switching fabrics for tele/data-communications 75,76 , optical phase arrays 77,78 , quantum networks, and future optical computing architectures.…”

Sub-Volt High-Speed Silicon MOSCAP Microring Modulator Driven by High Mobility Conductive Oxide

“…As a comparison, MOSCAP-driven Si-MRMs can achieve a much larger capacitance density using ultra-thin high dielectric constant insulators such as HfO 2 . In addition, MOSCAP devices allow heterogeneous integration of more E-O efficient gate materials with Si waveguide such as III-V compound semiconductors and graphene [23][24][25][26][27][28][29][30] . In the past two decades, high-speed MOSCAP Si-MRMs, including heterogeneously integrated functional materials, have been demonstrated (Supplementary Information I) 7,10,[31][32][33][34][35][36][37] .…”