An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

In this paper, the physical mechanisms involved in electron-beam-induced current (EBIC) imaging of semiconductor pn-junctions are reviewed to propose a model and optimize the acquisition of experimental data. Insights are drawn on the dependence of the EBIC signal with electron accelerating voltage and surface conditions. It is concluded that improvements in the resolution of EBIC are possible when the surface conditions of the specimens are carefully considered and optimized. A lower accelerating voltage and an increase of the surface recombination velocities are quantitatively shown to maximize the EBIC lateral resolution in locating the pn-junction. The effect of surface band bending is included in the model, and it is seen to primarily affect the surface recombination. Introducing controlled surface damage is shown as a potential method for resolution enhancement via focused ion beam milling with Ga+ ions. These findings contribute to the understanding of this technique and can produce further improvements to its application in semiconductor device technology.

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An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

Cited by 4 publications

References 24 publications

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