An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

Kumar, Ashwani; Souza, M.M. De

doi:10.1109/led.2017.2747898

Cited by 6 publications

(5 citation statements)

References 21 publications

(26 reference statements)

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“…6 b , under the gates of the Pch MOSFETs, the undoped GaN layer remains on the AlGaN layer. In such device geometry, theoretical analysis and calculations indicated that positive V T values are expected due to the high‐density negative polarisation charge at the upper GaN/AlGaN heterointerface [31, 32]. Therefore, our measured results implied that additional positive charges or donor type traps existed in the fabricated Pch MOS structures and these defects could deplete the 2DHG under the gates.…”

Section: Resultsmentioning

confidence: 89%

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Nakajima

Kubota

Tsutsui

et al. 2018

IET Power Electronics

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Gallium nitride (GaN)-based P-channel (Pch) and N-channel (Nch) metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off operations were realised. Both Pch and Nch MOSFETs were monolithically fabricated in a polarisation-junction platform wafer. The platform wafer was constructed with a GaN/aluminium GaN/GaN double heterostructure, which has both two-dimensional hole gas (2DHG) and 2D electron gas (2DEG). The drain currents of Pch and Nch MOSFETs flow through 2DHG and 2DEG, respectively. The threshold gate voltages of the fabricated Pch and Nch MOSFETs were −2.7 and 6.7 V, respectively. It was shown that the threshold voltage and the on-state resistance of the Pch MOSFET can be controlled by adjusting the 2DEG potential. Furthermore, using Pch and Nch MOSFETs, complementary MOS inverter operation was demonstrated.

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Section: Resultsmentioning

confidence: 89%

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Nakajima

Kubota

Tsutsui

et al. 2018

IET Power Electronics

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“…The most common approach for achieving 2DHG is represented by inverting the common AlGaN/GaN sequence. [3][4][5] However, in this case an additional 2DEG is created at the back-side of a doubleheterostructure GaN/AlGaN/GaN QW exhibiting a possible shunt and a parasitic capacitance. Here we suggest a noninverted InAl(Ga)N/GaN system where a sole 2DHG is provided by an In-rich InAl(Ga)N barrier.…”

mentioning

confidence: 99%

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Hasenöhrl

Chauhan

Dobročka

et al. 2018

Appl. Phys. Express

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InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7N/GaN transition, free electron density of ∼2 × 1011 cm−2 and mobility of 44 cm2 V−1 s−1. On the other hand, the sample prepared without growth interruption demonstrated In0.4Al0.15Ga0.45N at the interface and compositional grading towards the In0.4Al0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ∼2 × 1012 cm−2 and mobility of ∼0.6 cm2 V−1 s−1. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.

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“…The key models employed in the simulation include Shockley-Read-Hall model, Fermi-Dirac model, polarization models (POLARIZATION and CALC. STRAIN for spontaneous polarization and piezoelectric polarization, respectively), Auger recombination (AUGER), and constant low-field mobility model [32,33]. In order to well match the actual device characteristics, based on previous reports, the simulation parameters are set as follows: the gate metal work function of 4.8 eV [19]; the Al 2 O 3 relative dielectric constant of 9.3; the specific Ohmic contact resistance (ρ C ) of 1.4 × 10 −4 Ω•cm 2 for all devices, same as the value reported in [34].…”

Section: Physical Models Used In Tcad Simulationmentioning

confidence: 99%

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

Xing,

Zhang,

et al. 2024

J. Phys. D: Appl. Phys.

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Herein, a novel enhancement-mode (E-mode) GaN-based p-channel FETs (p-FETs) with a linearly graded AlGaN (LGA) p-channel is proposed and numerically studied by Silvaco TCAD. Thanks to strong polarization-induced doping, three-dimensional hole gas (3DHG) can be uniformly generated in LGA to form a continuous p-channel with a hole concentration over 1018 cm–3. Combined with an optimized recessed gate structure, the LGA p-FET can simultaneously achieve a large threshold voltage (|V TH|) > 2 V and a high current density (|J DS|) of ∼10 mA mm−1 at V DS = −10 V. Additionally, two critical parameters of the LGA p-FETs, i.e. the depth of recessed gate and initial Al composition of LGA, are specifically studied to reveal the unique carrier behavior of 3DHG in the devices. Importantly, the LGA structure is further optimized and implemented as the p-type cap layer to construct an E-mode GaN n-FET. Thereby, based on the same LGA configuration, a GaN-based inverter with the matched complementary n- and p-FETs is monolithically constructed, showing sharp voltage transition. The reported novel LGA structure and its availability in both GaN-based E-mode n- and p-FETs provides valuable insights and guidance to construct highly efficient GaN p-type devices and All-GaN-based integrated circuits for compact power electronic systems.

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An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

Cited by 6 publications

References 21 publications

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

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