An Atomically Layered InSe Avalanche Photodetector

Lei, Sidong; Wen, Fangfang; Ge, Liehui; Najmaei, Sina; George, Antony; Gong, Yongji; Gao, Weilu; Jin, Zehua; Li, Bo; Lou, Jun; Kono, Junichiro; Vajtai, Róbert; Ajayan, Pulickel M.; Halas, Naomi J.

doi:10.1021/acs.nanolett.5b00016

Cited by 258 publications

(236 citation statements)

References 32 publications

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“…Photodetectors working in the near-infrared regime with photoresponsivity on the level of A/W have been demonstrated ( Figure 5B) by combining photogain in bilayer MoS 2 with hot electron injection, although the large responsivity is accompanied by a relatively slow response time [145]. Further research in this direction is needed as novel functionalities and unprecedented performance could potentially be realized by combining hot electron injection with new 2D materials such as InSe [147] and WS 2 [148].…”

Section: Hot Electrons With 2d Materialsmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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Abstract:Although the nonradiative decay of surface plasmons was once thought to be only a parasitic process within the plasmonic and metamaterial communities, hot carriers generated from nonradiative plasmon decay offer new opportunities for harnessing absorption loss. Hot carriers can be harnessed for applications ranging from chemical catalysis, photothermal heating, photovoltaics, and photodetection. Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized. The challenges and potential future directions are also discussed.

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Section: Hot Electrons With 2d Materialsmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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“…and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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“…Sidong Lei et al has achieved plasmonic enhancements for the photosensitivity by patterning arrays of Al nanodisks onto an InSe layer [111]. As shown in Figure 9a,b, plasmonic Al disk nanoantennas were fabricated onto the device.…”

Section: Designed Plasmonic Nanostructures In Devicesmentioning

confidence: 99%

Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

Cui

Yang

et al. 2017

Crystals

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Photodetectors based on two-dimensional (2D) nanostructures have led to a high optical response, and a long photocarrier lifetime because of spatial confinement effects. Since the discovery of graphene, many different 2D semiconductors have been developed and utilized in the ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges. This review presents a comprehensive summary of recent breakthroughs in constructing high-performance photodetectors based on 2D materials. First, we give a general overview of 2D photodetectors based on various single-component materials and their operating wavelength (ultraviolet to terahertz regime). Then, we summarize the design and controllable synthesis of heterostructure material systems to promote device photoresponse. Subsequently, special emphasis is put on the accepted methods in rational engineering of device architectures toward the photoresponse improvements. Finally, we conclude with our personal viewpoints on the challenges and promising future directions in this research field.

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An Atomically Layered InSe Avalanche Photodetector

Cited by 258 publications

References 32 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

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