An analytical transient model for a 1.5 V BiCMOS dynamic logic circuit for low-voltage deep submicrometer BiCMOS VLSI

Chiang, Cheng-Shing; Kuo, J.B.

doi:10.1109/16.368053

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1997

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“…BiCMOS is the technology combining the low power of CMOS with the high-speed and drive capability of bipolar for realizing high performance digital circuits [1][2][3]. Over the years BiCMOS integrated circuits have been well characterized for high-speed digital logic applications [4][5][6][7][8][9][10][11][12][13][14][15][16]. The circuit delay time model of the BiCMOS has been extensively studied and as a performance measure of the BiCMOS technology [12].…”

Section: Introductionmentioning

confidence: 99%

Influence of BJT Transit Frequency Limit Relationto MOSFET Parameters on the Switching Speedof BiCMOS Digital Circuits

Srivastava

1997

VLSI Design

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The use is made of the BJT transit frequency limit (fTL) dependence on the MOSFET parameters (L, Vth) to design BiCMOS digital circuits. The fTL relation is used in conjunction with the established BiCMOS gate delay models. It is shown that the minimum delay BiCMOS circuits driving the large capacitive load, can be designed at the transit frequency limit with the reduced BJT AREA factor. The time delay calculations are presented for a typical BiCMOS circuit and comparison is made with the results simulated using SPICE.

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