An analytical study of undoped symmetric double gate MOSFET (SDG)

Abstract

SUMMARYIn the present paper, compact analytical models for the threshold voltage, threshold voltage roll-off and subthreshold swing of undoped symmetrical double-gate MOSFET have been developed based on analytical solution of two-dimensional Poisson's equation for potential distribution. The developed models include drain-induced barrier lowering (DIBL) through the V ds -dependent parameter. The calculated threshold voltage value, obtained from the proposed model, shows a good agreement with the experimental and published results. The simulation results for potential show that the conduction is highly confined to the surfaces. The threshold voltage sensitivity to the thickness is found to be approximately 0.2%. Model prediction indicates that subthreshold slope is not linearly related to DIBL parameter for thick silicon film. The proposed analytical models not only provide useful insight into behavior of symmetrical DG MOSFETs but also serve as the basis for compact modeling.

Double Gates and Short-Channel Carbon Nanotube Transistors

“…On the other hand, double-gate MOSFETs with very high impurities and very thin layers are expected options for CMOS technology with very small dimensions [1]. High securities against short channel effects, high transconductance, and below-threshold voltage have been reported by many experimental and theoretical studies on the mentioned devices, [2], [3], [4].…”

“…In recent years, miniaturizing the transistors has gained special importance, [1]. The most important reasons are saving costs, decreasing power consumption, increasing speed and volume, and making lighter electronic tools.…”

“…Despite having these advantages, the physical shrinkage of ordinary transistors proves physical limitations and side effects such as changing the threshold voltage, an increase of the current leakage, reducing the barrier potential by draining the inductor, reducing the slope below the threshold voltage, and reducing the switching speed. Electron thrust properties are observed through the behavior of transistors, some of them are related to short channel effects, [1], [2]. In fact, because of these short-channel effects, downsizing a transistor faces a big challenge.…”

“…In recent years, one of the suitable structures to reduce these effects in nanometer-sized transistors is Double-Gate MOSFET, which is technologically the best compatible structure with ordinary MOSFETs and short-channel effects, [2], [3], [4], [5], [6]. Figure 1 shows the structure of this transistor.…”

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

“…In the last decades, several alternatives to conventional bulk MOSFETs have been proposed, for example, silicon‐on‐insulator (SOI) MOSFETs , multi‐gate MOSFETs , and recent junctionless FETs . Double‐gate (DG) MOSFETs are strongly considered as one of the most promising candidates for future CMOS applications by ITRS , because it has the advantage of excellent scalability due to inherent SCE immunity, good subthreshold slope, high drive current, and low subthreshold capacitance.…”