An analytical model of planar inductors on lowly doped silicon substrates for high frequency analog design up to 3 GHz

Crols, Jan; Kinget, Peter R.; Craninckx, Jan; Steyaert, Michiel

doi:10.1109/vlsic.1996.507703

Cited by 63 publications

(39 citation statements)

References 4 publications

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“…Further improvement would come from a model that would allow one to optimize the inductor within the circuit design process. One step in that direction came from establishing analytical relationships between each component of a lumpedelement model and the technology and layout parameters from an extensive set of experiments, but this concept was not further pursued [6]. Instead, as the second generic approach to compact inductor modeling, the development of physics-based and fast inductor models has been proposed by several research groups, e.g., [7]- [10].…”

Section: Circular Ring Modelmentioning

confidence: 99%

On the design of RF spiral inductors on silicon

Burghartz

Rejaei

2003

IEEE Trans. Electron Devices

254

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Abstract-This review of design principles for implementation of a spiral inductor in a silicon integrated circuit fabrication process summarizes prior art in this field. In addition, a fast and physics-based inductor model is exploited to put the results contributed by many different groups in various technologies and achieved over the past eight years into perspective. Inductors are compared not only by their maximum quality factors ( max ), but also by taking the frequency at max , the inductance value ( ), the self-resonance frequency ( SR ), and the coil area into account.It is further explained that the spiral coil structure on a lossy silicon substrate can operate in three different modes, depending at first order on the silicon doping concentration. Ranging from high to low substrate resistivity, inductor-mode, resonator-mode, and eddy-current regimes are defined by characteristic changes of max , , and SR . The advantages and disadvantages of patterned or blanket resistive ground shields between the inductor coil and substrate and the effect of a substrate contact on the inductor are also addressed in this paper. Exploring optimum inductor designs under various constraints leverages the speed of the model. Finally, in view of the continuously increasing operating frequencies in advancing to new generations of RF systems, the range of feasible inductance values for given quality factors are predicted on the basis of optimum technological features.

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Section: Circular Ring Modelmentioning

confidence: 99%

On the design of RF spiral inductors on silicon

Burghartz

Rejaei

2003

IEEE Trans. Electron Devices

254

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“…Accurate simulations often resort to time-consuming 3-dimensional (3-D) numerical solvers [1,11]. Alternatively, several models based on curve fitting or empirical formulae were proposed [12,13], but they are therefore not scalable over a wide range of layout dimensions and process parameters. In practice, most authors extracted these two parameters separately by the classical Grover approach [14] and analytical formulae that only accounts for the skin effect at high frequencies [8,15].…”

Section: Introductionmentioning

confidence: 99%

Accurate model for micromachined microwave planar spiral inductors

Zhang

Long

et al. 2003

Int J RF and Microwave Comp Aid Eng

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An accurate model is presented for micromachined on-chip spiral inductors, in which the high-frequency current crowding effects in metal traces are considered by simplified partial element equivalent circuits, and the substrate parasitics are extracted by the parametric modeling method. The model has been confirmed by both measurements and the results from the 3-dimensional finite element method. This equivalent circuit model enables the prediction and optimization of high-Q micromachined spiral inductors in gigahertz frequencies.

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“…The geometry of a polygonal spiral is defined by the following lateral parameters: the outer diameter , the conductor width , the conductor spacing , the number of turns , and the number of sides in the polygon [3]. While square spirals are the most popular because of the ease of their layout, hexagonal , octagonal spirals have also been commonly used [4].…”

Section: A Modeling Of Spiral Inductorsmentioning

confidence: 99%

“…Thus, significant work has gone into modeling spiral inductors using lumped circuit models [6], [4], [7], [8]. In this paper, we use the simple and well-accepted lumped model proposed in [6].…”

Section: A Modeling Of Spiral Inductorsmentioning

confidence: 99%

Bandwidth extension in CMOS with optimized on-chip inductors

Mohan

Hershenson²,

Boyd

et al. 2000

IEEE J. Solid-State Circuits

362

146

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We present a technique for enhancing the bandwidth of gigahertz broad-band circuitry by using optimized on-chip spiral inductors as shunt-peaking elements. The series resistance of the on-chip inductor is incorporated as part of the load resistance to permit a large inductance to be realized with minimum area and capacitance. Simple, accurate inductance expressions are used in a lumped circuit inductor model to allow the passive and active components in the circuit to be simultaneously optimized. A quick and efficient global optimization method, based on geometric programming, is discussed. The bandwidth extension technique is applied in the implementation of a 2.125-Gbaud preamplifier that employs a common-gate input stage followed by a cascoded common-source stage. On-chip shunt peaking is introduced at the dominant pole to improve the overall system performance, including a 40% increase in the transimpedance. This implementation achieves a 1.6-k transimpedance and a 0.6-A input-referred current noise, while operating with a photodiode capacitance of 0.6 pF. A fully differential topology ensures good substrate and supply noise immunity. The amplifier, implemented in a triple-metal, single-poly, 14-GHz , 0.5-m CMOS process, dissipates 225 mW, of which 110 mW is consumed by the 50-output driver stage. The optimized on-chip inductors consume only 15% of the total area of 0.6 mm 2 .

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An analytical model of planar inductors on lowly doped silicon substrates for high frequency analog design up to 3 GHz

Cited by 63 publications

References 4 publications

On the design of RF spiral inductors on silicon

On the design of RF spiral inductors on silicon

Accurate model for micromachined microwave planar spiral inductors

Bandwidth extension in CMOS with optimized on-chip inductors

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