An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G

A novel 0.7 V high sensitivity complementary differential MAGFET sensor for contactless mechatronic applications

“…The plot also indicates a low-frequency pole for the sensitivity transfer function indicating low sensitivity near DC magnetic field. On the other hand, the difference in the sensitivity values between the simulation and the measurements is in general mainly due to the difference between the simulated and the actual in and ip values with respect to the Hall mobilities for the 130 nm CMOS process used for fabrication, and, the geometric correction factor given by [12]. In addition, the sensitivity is limited by the small bias current of only around 5 A drawn from a low supply voltage of only 0.7 V using the nanometric CMOS process and the short channel length.…”

“…The Hall factor r H is known to vary with doping, temperature, geometry (aspect ratio) and gate voltage [17]. In addition to the variation of the relative current sensitivities due to the Hall mobility as per (4), the relative current sensitivities are also directly dependent on the MAGFET geometry (the channel length in relation to the channel width), technological parameters such as source narrowing (D), and, on the gate-tosource and the gate-to-drain DC-biasing voltages [7,12]. Some authors (Rodrigo model) [18] consider it to be dependent only on Hall mobility, considering the extended Hall mobility model given by (4).…”

“…The relation between the relative current sensitivities and the operating point [2,7,12,13] of the NMAGFET and the PMAGFET in the presence of a magnetic field are, respectively, given by,…”

2D MAGFET-type sensors modeling: Application to a new device design, the CHOPFET

“…Let's introduce one more parameter, Ho, the gate overlap (figure 1). This parameter can usually be neglected in a standard MAGFET because it has negligible influence on the sensitivity [1]. On the CHOPFET yet it has a strong impact on the device's sensitivity as will be discussed now.…”

“…Over the last two decades, reports on split-drain MAGFET devices have regularly been issued [1], [2], [3]. Analysis and models of these magnetic transducers give reliable predictions of the sensitivity according to the geometric and technological parameters.…”