An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass

“…Second, the threshold voltage (V t ) is shifted to a higher value due to the higher quantized subband energies. Previously, the QM V t shift has been analytically modeled for conventional bulk MOSFETs [3], double-gate (DG) MOSFETs [4], and also TG and QG MOSFETs [5]. In this paper, we develop an analytic model for quantum confinement induced V t shift in undoped SG MOSFETs, a type of MG MOSFETs with circular cross-sections.…”

Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects

“…This leads to two different inversion charge sheet densities. Then, the two specific values of b can be calculated through (21). Fig.…”

“…Different criteria for the threshold of inversion in the intrinsic body MOSFETs have been proposed [16]. Among them, the constant charge definition for the threshold voltage has been widely accepted for DG MOSFETs [17][18][19][20][21]. Using this definition, V TH may be determined as the gate voltage at which the minimum sheet density of carriers reaches a value, denoted by Q TH , which is adequate for identifying the turn on condition [17].…”

“…To determine u c in the quantum case, we use the sheet density of carriers given by Trellakiis and coworkers [12] and Granzner and coworkers [21] Q ¼ qKT…”

A surface field based model for ultra thin body undoped symmetric DG MOSFETs

“…The superscript "CL" is for the classic case. To determine s in the quantum case, we use the sheet density of carriers given by [11], [12] …”