Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects

Drain current model for strained-Si/Si1−xGex/strained-Si double-gate MOSFETs including quantum effects

“…We, therefore, choose two values for N inv in this region, e.g., N 1 = 10 8 cm −2 and N 2 = 10 9 cm −2 , and obtain E 1 and E 2 from equations ( 2)- (4). Substituting these values into equation (5) in the subthreshold region, we can extract p 1 and c 1 as…”

“…These devices are important alternatives to bulk transistors in implementing nanoelectronic circuits [2,3]. In addition to the reduced short channel effects in multi-gate transistors, channel mobility is enhanced, while random dopant fluctuation is minimized, which is due to low impurity concentration in the body of these multi-gate devices [4,5]. Using strained-silicon layers is another approach to enhance the channel mobility.…”

Numerical investigation of nanoscale double‐gate junctionless MOSFET with drain and source extensions including interfacial defects

“…2 Numerical simulation modeling Since almost closed form models are based on approximations or simplifying hypothesis, which reduce their efficiency in dealing with deep nanoscale devices, numerical frameworks are finding increasing deployment by designers community [12]. Hence, we use Atlas two-dimensional simulator to develop a numerical model that is more accurate and allows catching difficult aspects of analog/RF device performance.…”