An analytical drain current model for symmetric double-gate MOSFETs

Yu, Fangyong; Huang, Gongyi; Lin, Wei; Xu, Chuanlong

doi:10.1063/1.5024574

Cited by 8 publications

(3 citation statements)

References 20 publications

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“…Now, this mobile charge model is used to derive the drain current ( I D ) expression. It is evaluated using the Pao‐Sah integral and integrating Q MOB from source to drain as follows 41 :

I_{normalD} = - μ \frac{W}{L} \int_{0}^{V_{DS}} Q_{MOB} dV = - μ \frac{W}{L} \int_{Q_{MOBS}}^{Q_{MOBD}} Q_{MOB} dV

I_{normalD} = - μ \frac{W}{L} {([], \begin{array}{l} \frac{{qN}_{D} t_{CH}}{2} \ln ((), Q_{MOB} goodbreak+ {qN}_{D} t_{CH}) goodbreak- \frac{α t_{FE} Q_{MOB}^{2}}{2} goodbreak- 3 β t_{FE}^{2} Q_{MOB}^{2} ({}, \begin{array}{r} \frac{Q_{MOB}^{2}}{8} goodbreak+ \frac{Q_{MOB} N_{D} {qt}_{CH}}{2} \\ goodbreak+ {(\frac{N_{D} {qt}_{CH}}{2})}^{2} \end{array}) \\ goodbreak- \frac{Q_{MOB}}{2} ((), 3 V_{T} goodbreak- \frac{Q_{MOB} t_{CH}}{8 ε_{si}} goodbreak+ \frac{Q_{MOB} t_{CH}}{2 ε_{IL}}) \end{array})}_{Q_{MOBS}}^{Q_{MOBD}}

…”

Section: Modelmentioning

confidence: 99%

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Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Yadav,

Rewari,

Pandey

2023

Int J Numerical Modelling

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An analytical drain current model for double gate junctionless accumulation mode negative capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the merits of junctionless accumulation mode and negative capacitance effect such as fabrication feasibility, low power dissipation, and reduced degradation in mobility. The novelty manifested in our work is because of the incorporation of the JAM structure in ferroelectric‐based negative capacitance FET. The benefit of JAM over existing FETs is that it combines the benefits of the junctionless transistor (JLT) and conventional FETs. It avoids excessive parasitic resistance due to stronger doping in the source and drain areas, resulting in higher conductivity and better characteristics than JLT. An analytical surface potential and threshold voltage have been developed using Poisson's equation and Landau Khalatnikov's (L‐K) equation. The drain current is then determined by integrating the mobile charge using the Pao–Sah integral. Various critical parameters such as surface potential, gain, capacitance, mobile charge density, drain current, threshold voltage, subthreshold swing, transconductance, and the switching ratio have been assessed extensively by varying ferroelectric layer and channel layer thicknesses, respectively. The ON current increases with the increase in ferroelectric thickness due to the voltage amplification given by the ferroelectric layer, and the switching curve gets steeper. The analytical modeling is done in MATLAB, and its comparison is made with the TCAD numerical simulation. The obtained analytical results and the numerical simulation results correspond well.

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“…Now, this mobile charge model is used to derive the drain current ( I D ) expression. It is evaluated using the Pao‐Sah integral and integrating Q MOB from source to drain as follows 41 :

I_{normalD} = - μ \frac{W}{L} \int_{0}^{V_{DS}} Q_{MOB} dV = - μ \frac{W}{L} \int_{Q_{MOBS}}^{Q_{MOBD}} Q_{MOB} dV

I_{normalD} = - μ \frac{W}{L} {([], \begin{array}{l} \frac{{qN}_{D} t_{CH}}{2} \ln ((), Q_{MOB} goodbreak+ {qN}_{D} t_{CH}) goodbreak- \frac{α t_{FE} Q_{MOB}^{2}}{2} goodbreak- 3 β t_{FE}^{2} Q_{MOB}^{2} ({}, \begin{array}{r} \frac{Q_{MOB}^{2}}{8} goodbreak+ \frac{Q_{MOB} N_{D} {qt}_{CH}}{2} \\ goodbreak+ {(\frac{N_{D} {qt}_{CH}}{2})}^{2} \end{array}) \\ goodbreak- \frac{Q_{MOB}}{2} ((), 3 V_{T} goodbreak- \frac{Q_{MOB} t_{CH}}{8 ε_{si}} goodbreak+ \frac{Q_{MOB} t_{CH}}{2 ε_{IL}}) \end{array})}_{Q_{MOBS}}^{Q_{MOBD}}

…”

Section: Modelmentioning

confidence: 99%

“…Now, this mobile charge model is used to derive the drain current (I D ) expression. It is evaluated using the Pao-Sah integral and integrating Q MOB from source to drain as follows 41 :…”

Section: Drain Current Modelmentioning

confidence: 99%

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Yadav,

Rewari,

Pandey

2023

Int J Numerical Modelling

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“…A double gate (DG) MOSFET, which is the simplest structure among multiple gate devices, has been studied as a device capable of reducing the short-channel effect [5][6][7]. Although a two-dimensional simulation method is used to analyze the shortchannel effect of sub-10 nm DGMOSFETs, a simple analytical model for circuit analysis has the focus of many studies [8][9][10]. However, most analyses using the analytical model are performed on DGMOSFETs of 20 nm or larger [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

Jung¹

2020

IJECE

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We propose an analytical model for subthreshold swing using scale length for sub-10 nm double gate (DG) MOSFETs. When the order of the calculation for the series type potential distribution is increased it is possible to obtain accuracy, but there is a problem that the calculation becomes large. Using only the first order calculation of potential distribution, we derive the scale length λ1 and use it to obtain an analytical model of subthreshold swing. The findings show this subthreshold swing model is in concordance with a 2D simulation. The relationship between the channel length and silicon thickness, which can analyze the subthreshold swing using λ1, is derived by the relationship between the scale length and the geometric mean of the silicon and oxide thickness. If the silicon thickness and oxide film thickness satisfy the condition of (Lg-0.215)/6.38 > tsi(=tox), it is found that the result of this model agrees with the results using higher order calculations, within a 4% error range.

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Analytical Investigation of Transconductance and Differential Conductance of Ultrathin ID-DG MOSFET with Gradual Channel Approximation

Deyasi¹,

Chakraborty²,

Mondal³

et al. 2021

Lecture Notes in Electrical Engineering

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An analytical drain current model for symmetric double-gate MOSFETs

Cited by 8 publications

References 20 publications

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

Analytical Investigation of Transconductance and Differential Conductance of Ultrathin ID-DG MOSFET with Gradual Channel Approximation

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